Microscopic theory of gain for an InGaN/AIGaN quantum well laser

W. W. Chow, A. F. Wright, A. Girndt, F. Jahnke, S. W. Koch

Research output: Contribution to journalArticle

48 Scopus citations

Abstract

This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.

Original languageEnglish (US)
Pages (from-to)2608-2610
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number18
DOIs
StatePublished - Nov 3 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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