Abstract
This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2608-2610 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 71 |
| Issue number | 18 |
| State | Published - Nov 3 1997 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Microscopic theory of gain for an InGaN/AIGaN quantum well laser. / Chow, W. W.; Wright, A. F.; Girndt, A.; Jahnke, F.; Koch, Stephan W.
In: Applied Physics Letters, Vol. 71, No. 18, 03.11.1997, p. 2608-2610.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Microscopic theory of gain for an InGaN/AIGaN quantum well laser
AU - Chow, W. W.
AU - Wright, A. F.
AU - Girndt, A.
AU - Jahnke, F.
AU - Koch, Stephan W
PY - 1997/11/3
Y1 - 1997/11/3
N2 - This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.
AB - This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.
UR - http://www.scopus.com/inward/record.url?scp=0031551601&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031551601&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031551601
VL - 71
SP - 2608
EP - 2610
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
ER -