Microscopic theory of gain for an InGaN/AIGaN quantum well laser

W. W. Chow; A. F. Wright; A. Girndt; F. Jahnke; S. W. Koch

doi:10.1063/1.120155

Microscopic theory of gain for an InGaN/AIGaN quantum well laser

W. W. Chow, A. F. Wright, A. Girndt, F. Jahnke, S. W. Koch

Optical Sciences, College of

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49 Scopus citations

Abstract

This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.

Original language	English (US)
Pages (from-to)	2608-2610
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	18
DOIs	https://doi.org/10.1063/1.120155
State	Published - Nov 3 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120155

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abstract = "This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.",

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AU - Chow, W. W.

AU - Wright, A. F.

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AU - Jahnke, F.

AU - Koch, S. W.

PY - 1997/11/3

Y1 - 1997/11/3

N2 - This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.

AB - This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.

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Microscopic theory of gain for an InGaN/AIGaN quantum well laser

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