### Abstract

This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.

Original language | English (US) |
---|---|

Pages (from-to) | 2608-2610 |

Number of pages | 3 |

Journal | Applied Physics Letters |

Volume | 71 |

Issue number | 18 |

State | Published - Nov 3 1997 |

Externally published | Yes |

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### ASJC Scopus subject areas

- Physics and Astronomy (miscellaneous)

### Cite this

*Applied Physics Letters*,

*71*(18), 2608-2610.

**Microscopic theory of gain for an InGaN/AIGaN quantum well laser.** / Chow, W. W.; Wright, A. F.; Girndt, A.; Jahnke, F.; Koch, Stephan W.

Research output: Contribution to journal › Article

*Applied Physics Letters*, vol. 71, no. 18, pp. 2608-2610.

}

TY - JOUR

T1 - Microscopic theory of gain for an InGaN/AIGaN quantum well laser

AU - Chow, W. W.

AU - Wright, A. F.

AU - Girndt, A.

AU - Jahnke, F.

AU - Koch, Stephan W

PY - 1997/11/3

Y1 - 1997/11/3

N2 - This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.

AB - This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.

UR - http://www.scopus.com/inward/record.url?scp=0031551601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031551601&partnerID=8YFLogxK

M3 - Article

VL - 71

SP - 2608

EP - 2610

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -