Microscopic theory of gain in a group-III nitride strained quantum well laser

W. W. Chow, A. F. Wright, J. S. Nelson, S. Hughes, A. Knorr, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The study of gain properties in group-III nitride quantum wells is complicated by several factors. In view of this, an approach is presented that involves a first-principles bandstructure calculation, the results of which are incorporated into a microscopic laser theory. The band structure calculation applies a density-functional method. This method provides a single analytical model for computing the group-II nitride material properties, thus ensuring consistency in the values for the different bandstructure parameters, and circumventing the discrepancies present in the literature due to different experimental conditions, or different computational methods. With a complete set of the relevant material parameters, it is possible to study the effects of strain and quantum confinement.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
PublisherIEEE
Pages456-457
Number of pages2
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA
Duration: Jun 2 1996Jun 7 1996

Other

OtherProceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96
CityAnaheim, CA, USA
Period6/2/966/7/96

Fingerprint

Quantum well lasers
Nitrides
Laser theory
Quantum confinement
Computational methods
Band structure
Semiconductor quantum wells
Analytical models
Materials properties

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Chow, W. W., Wright, A. F., Nelson, J. S., Hughes, S., Knorr, A., & Koch, S. W. (1996). Microscopic theory of gain in a group-III nitride strained quantum well laser. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp. 456-457). IEEE.

Microscopic theory of gain in a group-III nitride strained quantum well laser. / Chow, W. W.; Wright, A. F.; Nelson, J. S.; Hughes, S.; Knorr, A.; Koch, Stephan W.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. IEEE, 1996. p. 456-457.

Research output: Chapter in Book/Report/Conference proceedingChapter

Chow, WW, Wright, AF, Nelson, JS, Hughes, S, Knorr, A & Koch, SW 1996, Microscopic theory of gain in a group-III nitride strained quantum well laser. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. IEEE, pp. 456-457, Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96, Anaheim, CA, USA, 6/2/96.
Chow WW, Wright AF, Nelson JS, Hughes S, Knorr A, Koch SW. Microscopic theory of gain in a group-III nitride strained quantum well laser. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. IEEE. 1996. p. 456-457
Chow, W. W. ; Wright, A. F. ; Nelson, J. S. ; Hughes, S. ; Knorr, A. ; Koch, Stephan W. / Microscopic theory of gain in a group-III nitride strained quantum well laser. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. IEEE, 1996. pp. 456-457
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