Microscopic theory of gain in a group-III nitride strained quantum well laser

W. W. Chow, A. F. Wright, J. S. Nelson, S. Hughes, A. Knorr, S. W. Koch

Research output: Contribution to journalConference articlepeer-review

Abstract

The study of gain properties in group-III nitride quantum wells is complicated by several factors. In view of this, an approach is presented that involves a first-principles bandstructure calculation, the results of which are incorporated into a microscopic laser theory. The band structure calculation applies a density-functional method. This method provides a single analytical model for computing the group-II nitride material properties, thus ensuring consistency in the values for the different bandstructure parameters, and circumventing the discrepancies present in the literature due to different experimental conditions, or different computational methods. With a complete set of the relevant material parameters, it is possible to study the effects of strain and quantum confinement.

Original languageEnglish (US)
Pages (from-to)456-457
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - Jan 1 1996
EventProceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA
Duration: Jun 2 1996Jun 7 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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