This article reviews a microscopic theory to compute gain and absorption spectra of semiconductor quantum-well structures. The single-particle energies (band structure) are calculated by using Luttinger-Kohn theory in the envelope function approximation. The Coulomb-interacting electron-hole plasma in the laser gain region is treated at the level of quantum-kinetic equations in the Markov limit. Examples for results are presented for narrow- and wide-gap III-V and II-VI quantum-well systems.
|Original language||English (US)|
|Number of pages||12|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Jan 1 1998|
ASJC Scopus subject areas
- Materials Science(all)