Microscopic theory of laser gain in semiconductor quantum wells

A. Girndt, Stephan W Koch, W. W. Chow

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

This article reviews a microscopic theory to compute gain and absorption spectra of semiconductor quantum-well structures. The single-particle energies (band structure) are calculated by using Luttinger-Kohn theory in the envelope function approximation. The Coulomb-interacting electron-hole plasma in the laser gain region is treated at the level of quantum-kinetic equations in the Markov limit. Examples for results are presented for narrow- and wide-gap III-V and II-VI quantum-well systems.

Original languageEnglish (US)
Pages (from-to)1-12
Number of pages12
JournalApplied Physics A: Materials Science and Processing
Volume66
Issue number1
StatePublished - 1998
Externally publishedYes

Fingerprint

Band structure
Semiconductor quantum wells
quantum wells
Lasers
particle energy
kinetic equations
lasers
energy bands
Absorption spectra
envelopes
absorption spectra
Plasmas
Kinetics
Electrons
approximation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Microscopic theory of laser gain in semiconductor quantum wells. / Girndt, A.; Koch, Stephan W; Chow, W. W.

In: Applied Physics A: Materials Science and Processing, Vol. 66, No. 1, 1998, p. 1-12.

Research output: Contribution to journalArticle

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