Microscopic theory of nonequilibrium effects in semiconductor laser structures

A. Thränhardt, S. W. Koch, J. Hadert, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A quantitative analysis of carrier and LO phonon scattering is presented. For quantification of scattering, effective times for carrier-carrier and carrier-phonon scattering are extracted from a microscopic calculation for different structures. A large variance is observed depending on the material parameters, sometimes providing counter-examples to popularly established approximations used e.g. in laser simulations. Microscopically calculated times may be used for parameter studies in a nonequilibrium laser model.

Original languageEnglish (US)
Title of host publicationNUSOD '05 - Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices
Pages13-14
Number of pages2
DOIs
StatePublished - Dec 1 2005
EventNUSOD '05 - 5th International Conference on Numerical Simulation of Optoelectronic Devices - Berlin, Germany
Duration: Sep 19 2005Sep 22 2005

Publication series

NameNUSOD '05 - Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices
Volume2005

Other

OtherNUSOD '05 - 5th International Conference on Numerical Simulation of Optoelectronic Devices
CountryGermany
CityBerlin
Period9/19/059/22/05

ASJC Scopus subject areas

  • Engineering(all)

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    Thränhardt, A., Koch, S. W., Hadert, J., & Moloney, J. V. (2005). Microscopic theory of nonequilibrium effects in semiconductor laser structures. In NUSOD '05 - Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 13-14). [1518111] (NUSOD '05 - Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices; Vol. 2005). https://doi.org/10.1109/NUSOD.2005.1518111