Microscopic theory of optical nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells

W. Chow, M. Kira, Stephan W Koch

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

Microscopic calculations of the absorption and luminescence spectra are presented for wide bandgap Ga1-xInxN/GaN quantum well systems. Whereas structures with narrow well widths exhibit the usual excitation-dependent bleaching of the exciton resonance without shifting spectral position, a significant blueshift of the exciton peak is obtained for wider quantum wells. This blueshift, which is also present in the excitation-dependent luminescence spectra, is attributed to the interplay between the screening of a strain induced piezoelectric field and the density dependence of many-body Coulomb effects. The calculations also show an over two orders of magnitude increase in the spontaneous electron-hole-pair lifetime with well width, due to the reduction of the electron-hole wave function overlap in the wider wells. The resulting decrease in spontaneous emission loss is predicted to lead to improved threshold properties in wide quantum well lasers.

Original languageEnglish (US)
Pages (from-to)1947-1952
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number3
StatePublished - 1999
Externally publishedYes

Fingerprint

Spontaneous emission
Excitons
Nitrides
spontaneous emission
Semiconductor quantum wells
nitrides
Luminescence
nonlinearity
excitons
quantum wells
luminescence
life (durability)
Quantum well lasers
Electrons
quantum well lasers
bleaching
Bleaching
Wave functions
excitation
Screening

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

@article{ec3214a98b2e45429515737bf0e7eda3,
title = "Microscopic theory of optical nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells",
abstract = "Microscopic calculations of the absorption and luminescence spectra are presented for wide bandgap Ga1-xInxN/GaN quantum well systems. Whereas structures with narrow well widths exhibit the usual excitation-dependent bleaching of the exciton resonance without shifting spectral position, a significant blueshift of the exciton peak is obtained for wider quantum wells. This blueshift, which is also present in the excitation-dependent luminescence spectra, is attributed to the interplay between the screening of a strain induced piezoelectric field and the density dependence of many-body Coulomb effects. The calculations also show an over two orders of magnitude increase in the spontaneous electron-hole-pair lifetime with well width, due to the reduction of the electron-hole wave function overlap in the wider wells. The resulting decrease in spontaneous emission loss is predicted to lead to improved threshold properties in wide quantum well lasers.",
author = "W. Chow and M. Kira and Koch, {Stephan W}",
year = "1999",
language = "English (US)",
volume = "60",
pages = "1947--1952",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Microscopic theory of optical nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells

AU - Chow, W.

AU - Kira, M.

AU - Koch, Stephan W

PY - 1999

Y1 - 1999

N2 - Microscopic calculations of the absorption and luminescence spectra are presented for wide bandgap Ga1-xInxN/GaN quantum well systems. Whereas structures with narrow well widths exhibit the usual excitation-dependent bleaching of the exciton resonance without shifting spectral position, a significant blueshift of the exciton peak is obtained for wider quantum wells. This blueshift, which is also present in the excitation-dependent luminescence spectra, is attributed to the interplay between the screening of a strain induced piezoelectric field and the density dependence of many-body Coulomb effects. The calculations also show an over two orders of magnitude increase in the spontaneous electron-hole-pair lifetime with well width, due to the reduction of the electron-hole wave function overlap in the wider wells. The resulting decrease in spontaneous emission loss is predicted to lead to improved threshold properties in wide quantum well lasers.

AB - Microscopic calculations of the absorption and luminescence spectra are presented for wide bandgap Ga1-xInxN/GaN quantum well systems. Whereas structures with narrow well widths exhibit the usual excitation-dependent bleaching of the exciton resonance without shifting spectral position, a significant blueshift of the exciton peak is obtained for wider quantum wells. This blueshift, which is also present in the excitation-dependent luminescence spectra, is attributed to the interplay between the screening of a strain induced piezoelectric field and the density dependence of many-body Coulomb effects. The calculations also show an over two orders of magnitude increase in the spontaneous electron-hole-pair lifetime with well width, due to the reduction of the electron-hole wave function overlap in the wider wells. The resulting decrease in spontaneous emission loss is predicted to lead to improved threshold properties in wide quantum well lasers.

UR - http://www.scopus.com/inward/record.url?scp=0001381947&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001381947&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001381947

VL - 60

SP - 1947

EP - 1952

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 3

ER -