Abstract
Microscopic calculations of the absorption and luminescence spectra are presented for wide bandgap Ga1-xInxN/GaN quantum well systems. Whereas structures with narrow well widths exhibit the usual excitation-dependent bleaching of the exciton resonance without shifting spectral position, a significant blueshift of the exciton peak is obtained for wider quantum wells. This blueshift, which is also present in the excitation-dependent luminescence spectra, is attributed to the interplay between the screening of a strain induced piezoelectric field and the density dependence of many-body Coulomb effects. The calculations also show an over two orders of magnitude increase in the spontaneous electron-hole-pair lifetime with well width, due to the reduction of the electron-hole wave function overlap in the wider wells. The resulting decrease in spontaneous emission loss is predicted to lead to improved threshold properties in wide quantum well lasers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1947-1952 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 60 |
| Issue number | 3 |
| State | Published - 1999 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
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Microscopic theory of optical nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells. / Chow, W.; Kira, M.; Koch, Stephan W.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 60, No. 3, 1999, p. 1947-1952.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Microscopic theory of optical nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells
AU - Chow, W.
AU - Kira, M.
AU - Koch, Stephan W
PY - 1999
Y1 - 1999
N2 - Microscopic calculations of the absorption and luminescence spectra are presented for wide bandgap Ga1-xInxN/GaN quantum well systems. Whereas structures with narrow well widths exhibit the usual excitation-dependent bleaching of the exciton resonance without shifting spectral position, a significant blueshift of the exciton peak is obtained for wider quantum wells. This blueshift, which is also present in the excitation-dependent luminescence spectra, is attributed to the interplay between the screening of a strain induced piezoelectric field and the density dependence of many-body Coulomb effects. The calculations also show an over two orders of magnitude increase in the spontaneous electron-hole-pair lifetime with well width, due to the reduction of the electron-hole wave function overlap in the wider wells. The resulting decrease in spontaneous emission loss is predicted to lead to improved threshold properties in wide quantum well lasers.
AB - Microscopic calculations of the absorption and luminescence spectra are presented for wide bandgap Ga1-xInxN/GaN quantum well systems. Whereas structures with narrow well widths exhibit the usual excitation-dependent bleaching of the exciton resonance without shifting spectral position, a significant blueshift of the exciton peak is obtained for wider quantum wells. This blueshift, which is also present in the excitation-dependent luminescence spectra, is attributed to the interplay between the screening of a strain induced piezoelectric field and the density dependence of many-body Coulomb effects. The calculations also show an over two orders of magnitude increase in the spontaneous electron-hole-pair lifetime with well width, due to the reduction of the electron-hole wave function overlap in the wider wells. The resulting decrease in spontaneous emission loss is predicted to lead to improved threshold properties in wide quantum well lasers.
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M3 - Article
AN - SCOPUS:0001381947
VL - 60
SP - 1947
EP - 1952
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 3
ER -