Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

S. Imhof, C. Bückers, A. Thränhardt, Jorg Hader, Jerome V Moloney, Stephan W Koch

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

Original languageEnglish (US)
Article number125009
JournalSemiconductor Science and Technology
Volume23
Issue number12
DOIs
StatePublished - Dec 1 2008

Fingerprint

Band structure
Semiconductor quantum wells
Optical properties
quantum wells
optical properties
Optical gain
Photoluminescence
photoluminescence
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells. / Imhof, S.; Bückers, C.; Thränhardt, A.; Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

In: Semiconductor Science and Technology, Vol. 23, No. 12, 125009, 01.12.2008.

Research output: Contribution to journalArticle

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