Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Condensed Matter Physics