Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

S. Imhof, C. Bückers, A. Thränhardt, Jorg Hader, Jerome V Moloney, Stephan W Koch

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Abstract

Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

Original languageEnglish (US)
Article number125009
JournalSemiconductor Science and Technology
Volume23
Issue number12
DOIs
Publication statusPublished - Dec 1 2008

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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