Microscopic VECSEL modeling

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This tutorial gives an overview of the microscopic approach developed to describe equilibrium and nonequilibrium effects in optically excited semiconductor systems with an emphasis to the application for VECSEL modelling. It is outlined how nonequilibrium quantum theory is used to derive dynamic equations for the relevant physical quantities, i.e. The optically induced polarization and the dynamical carrier occupation probabilities. Due to the Coulombic many-body interactions, polarization and populations couple to expectation values of higher-order quantum correlations. With the help of a systematic correlation expansion and truncation approach, we arrive at a closed set of equations. Formally these can be combined with Maxwell's equations for the classical light field, yielding the Maxwell-semiconductor Bloch equations (MSBE). However, instead of the more traditional approach where losses and dissipative processes are treated phenomenologically and/or through coupling to external reservoirs, we derive fully microscopic equations for the carrier-carrier and carrier-phonon scattering as well as the effective polarization dephasing. Due to their general nature, the resulting equations are fully valid under most experimentally relevant conditions. The theory is applied to model the high-intensity light field in the VECSEL cavity coupled to the dynamics of the optical polarization and the nonequilibrium carrier distributions in the quantum-well gain medium.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume8966
ISBN (Print)9780819498793
DOIs
StatePublished - 2014
EventVertical External Cavity Surface Emitting Lasers (VECSELs) IV - San Francisco, CA, United States
Duration: Feb 2 2014Feb 4 2014

Other

OtherVertical External Cavity Surface Emitting Lasers (VECSELs) IV
CountryUnited States
CitySan Francisco, CA
Period2/2/142/4/14

Fingerprint

Polarization
Non-equilibrium
Modeling
High intensity light
Semiconductor materials
Semiconductors
Phonon scattering
Quantum theory
Maxwell equations
Light polarization
polarization
Semiconductor quantum wells
Light Intensity
Quantum Well
Quantum Theory
Phonon
Closed set
Dynamic Equation
Maxwell's equations
Truncation

Keywords

  • High power operation
  • Microscopic theory
  • Nonequilibrium effects
  • Short pulseoperation
  • VECSEL modelling

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Koch, S. W., Hader, J., & Moloney, J. V. (2014). Microscopic VECSEL modeling. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8966). [896603] SPIE. https://doi.org/10.1117/12.2036083

Microscopic VECSEL modeling. / Koch, Stephan W; Hader, Jorg; Moloney, Jerome V.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8966 SPIE, 2014. 896603.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Koch, SW, Hader, J & Moloney, JV 2014, Microscopic VECSEL modeling. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8966, 896603, SPIE, Vertical External Cavity Surface Emitting Lasers (VECSELs) IV, San Francisco, CA, United States, 2/2/14. https://doi.org/10.1117/12.2036083
Koch SW, Hader J, Moloney JV. Microscopic VECSEL modeling. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8966. SPIE. 2014. 896603 https://doi.org/10.1117/12.2036083
Koch, Stephan W ; Hader, Jorg ; Moloney, Jerome V. / Microscopic VECSEL modeling. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8966 SPIE, 2014.
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