Microstructural evolution and defects in ultra-thin SIMOX materials during annealing

Jun Sik Jeoung, Rachel Evans, Supapan Seraphin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The microstructure of ultra-thin SIMOX depends strongly on implantation dose, energy and annealing conditions. We used TEM combined with AES and RBS to determine the microstructural evolution of SIMOX wafers subjected to various temperatures during annealing. We found that an optimum dose window to produce a continuous buried oxide layer without Si islands is 3.0-3.5×1017 O+/cm2 for 100 keV. The thickness of the silicon overlayer and BOX layer produced in this dose window was about 170 nm and 75 nm respectively. RBS analysis showed that a high quality crystalline Si layer was produced after annealing at 1350°C for 4 hrs. The defect density was very low (> 300/cm2) for all samples implanted at 100 keV.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.L. Veteran, D.L. O'Meara, V. Misra, P.S. Ho
Pages9-16
Number of pages8
Volume716
StatePublished - 2002
EventSilicon Materials - Processing, Characterization and Reliability - San Francisco, CA, United States
Duration: Apr 1 2002Apr 5 2002

Other

OtherSilicon Materials - Processing, Characterization and Reliability
CountryUnited States
CitySan Francisco, CA
Period4/1/024/5/02

Fingerprint

Microstructural evolution
Annealing
Defects
Defect density
Silicon
Oxides
Crystalline materials
Transmission electron microscopy
Microstructure
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jeoung, J. S., Evans, R., & Seraphin, S. (2002). Microstructural evolution and defects in ultra-thin SIMOX materials during annealing. In J. L. Veteran, D. L. O'Meara, V. Misra, & P. S. Ho (Eds.), Materials Research Society Symposium - Proceedings (Vol. 716, pp. 9-16)

Microstructural evolution and defects in ultra-thin SIMOX materials during annealing. / Jeoung, Jun Sik; Evans, Rachel; Seraphin, Supapan.

Materials Research Society Symposium - Proceedings. ed. / J.L. Veteran; D.L. O'Meara; V. Misra; P.S. Ho. Vol. 716 2002. p. 9-16.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jeoung, JS, Evans, R & Seraphin, S 2002, Microstructural evolution and defects in ultra-thin SIMOX materials during annealing. in JL Veteran, DL O'Meara, V Misra & PS Ho (eds), Materials Research Society Symposium - Proceedings. vol. 716, pp. 9-16, Silicon Materials - Processing, Characterization and Reliability, San Francisco, CA, United States, 4/1/02.
Jeoung JS, Evans R, Seraphin S. Microstructural evolution and defects in ultra-thin SIMOX materials during annealing. In Veteran JL, O'Meara DL, Misra V, Ho PS, editors, Materials Research Society Symposium - Proceedings. Vol. 716. 2002. p. 9-16
Jeoung, Jun Sik ; Evans, Rachel ; Seraphin, Supapan. / Microstructural evolution and defects in ultra-thin SIMOX materials during annealing. Materials Research Society Symposium - Proceedings. editor / J.L. Veteran ; D.L. O'Meara ; V. Misra ; P.S. Ho. Vol. 716 2002. pp. 9-16
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