Microwave properties of suspended single-walled carbon nanotubes with a field-effect transistor configuration

Mingguang Tuo, Lu Wang, Moh R. Amer, Xiaoju Yu, Stephen B. Cronin, Hao Xin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this paper, microwave transmission properties of suspended single-walled carbon nanotubes (SWCNTs) have been investigated up to 7.1 GHz with a field-effect transistor (FET) configuration by measuring the two-port S-parameters under different gate bias voltages. An open-through de-embedding method has been used to extract the intrinsic properties of CNTs. A lumped-element equivalent circuit model has been used and the values of each component have been fitted as a function of gate bias voltage.

Original languageEnglish (US)
Title of host publication2011 IEEE MTT-S International Microwave Symposium, IMS 2011
DOIs
StatePublished - Sep 7 2011
Event2011 IEEE MTT-S International Microwave Symposium, IMS 2011 - Baltimore, MD, United States
Duration: Jun 5 2011Jun 10 2011

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2011 IEEE MTT-S International Microwave Symposium, IMS 2011
CountryUnited States
CityBaltimore, MD
Period6/5/116/10/11

Keywords

  • Carbon nanotubes (CNTs)
  • S-parameters
  • de-embedding
  • equivalent circuit model
  • field-effect transistor (FET)
  • tapered transmission line

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Tuo, M., Wang, L., Amer, M. R., Yu, X., Cronin, S. B., & Xin, H. (2011). Microwave properties of suspended single-walled carbon nanotubes with a field-effect transistor configuration. In 2011 IEEE MTT-S International Microwave Symposium, IMS 2011 [5972893] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2011.5972893