Mm-Wave tunable colpitts oscillators based on FinFETs

Yunus Kelestemur, Soumyasanta Laha, Savas Kaya, Avinash Kodi, Hao Xin, Ahmed Louri

Research output: ResearchConference contribution

Abstract

The characteristics of compact tunable Colpitts oscillators built using FinFET transistor technology are presented. As compared to a conventional single gate MOSFET, the use of common-mode FinFET architecture allows for a more relaxed oscillatory criterion for Colpitts oscillator design, while adaption of independent-mode FinFETs bestows a Colpitts oscillator with a simple and efficient means for tunable performance. The frequency can be tuned to an extent of ∼5% of center frequency without the need of any extra components such as varactors. The effect of supply voltage and FinFET dimensions on the oscillation frequency has also been investigated. The oscillation criterion is relaxed when compared to that of an identical design in single gate MOSFET due to the increase of gm by a factor of 2 in case of a common-mode FinFET. No separate capacitors are used between the gate and source as part of a conventional Colpitts oscillator: The higher gate-source capacitance of the FinFET is conveniently utilized to substitute the external capacitor thus reducing parasitics and achieving the mm-wave frequency of 65 GHz and 165 GHz. The phase noise of the oscillator is-95 dBc/Hz at 1 MHz offset, for the case of 65 GHz circuit, which deteriorates in higher frequency versions. The compact and tunable characteristics of the proposed oscillator, along with its high frequency potential, make it suitable for applications such as on-chip wireless interconnects required for kilo-core computing that have hard limits on area and power but requires very precise tuning of the carrier.

LanguageEnglish (US)
Title of host publication2017 IEEE 18th Wireless and Microwave Technology Conference, WAMICON 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509043750
DOIs
StatePublished - May 16 2017
Externally publishedYes
Event18th IEEE Wireless and Microwave Technology Conference, WAMICON 2017 - Cocoa Beach, United States
Duration: Apr 24 2017Apr 25 2017

Other

Other18th IEEE Wireless and Microwave Technology Conference, WAMICON 2017
CountryUnited States
CityCocoa Beach
Period4/24/174/25/17

Fingerprint

FinFET
Capacitors
Varactors
Phase noise
Transistors
Capacitance
Tuning
Networks (circuits)
Electric potential
Wireless interconnects

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Kelestemur, Y., Laha, S., Kaya, S., Kodi, A., Xin, H., & Louri, A. (2017). Mm-Wave tunable colpitts oscillators based on FinFETs. In 2017 IEEE 18th Wireless and Microwave Technology Conference, WAMICON 2017 [7930274] Institute of Electrical and Electronics Engineers Inc.. DOI: 10.1109/WAMICON.2017.7930274

Mm-Wave tunable colpitts oscillators based on FinFETs. / Kelestemur, Yunus; Laha, Soumyasanta; Kaya, Savas; Kodi, Avinash; Xin, Hao; Louri, Ahmed.

2017 IEEE 18th Wireless and Microwave Technology Conference, WAMICON 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7930274.

Research output: ResearchConference contribution

Kelestemur, Y, Laha, S, Kaya, S, Kodi, A, Xin, H & Louri, A 2017, Mm-Wave tunable colpitts oscillators based on FinFETs. in 2017 IEEE 18th Wireless and Microwave Technology Conference, WAMICON 2017., 7930274, Institute of Electrical and Electronics Engineers Inc., 18th IEEE Wireless and Microwave Technology Conference, WAMICON 2017, Cocoa Beach, United States, 4/24/17. DOI: 10.1109/WAMICON.2017.7930274
Kelestemur Y, Laha S, Kaya S, Kodi A, Xin H, Louri A. Mm-Wave tunable colpitts oscillators based on FinFETs. In 2017 IEEE 18th Wireless and Microwave Technology Conference, WAMICON 2017. Institute of Electrical and Electronics Engineers Inc.2017. 7930274. Available from, DOI: 10.1109/WAMICON.2017.7930274
Kelestemur, Yunus ; Laha, Soumyasanta ; Kaya, Savas ; Kodi, Avinash ; Xin, Hao ; Louri, Ahmed. / Mm-Wave tunable colpitts oscillators based on FinFETs. 2017 IEEE 18th Wireless and Microwave Technology Conference, WAMICON 2017. Institute of Electrical and Electronics Engineers Inc., 2017.
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