Modal gain analysis of GaNAsP heterostructures on silicon

Nektarios Koukourakis, Dominic A. Funke, Nils C. Gerhardt, Martin R. Hofmann, B. Kunert, S. Liebich, S. Zinnkann, M. Zimprich, A. Beyer, S. Chatterjee, C. Bückers, S. W. Koch, K. Volz, W. Stolz

Research output: Contribution to journalConference article

Abstract

We present modal gain measurements of GaNAsP multiple quantum well structures grown lattice-matched on silicon using the stripe-length method. High modal gain values of up to 100 cm-1 are observed at room temperature.

Original languageEnglish (US)
JournalOptics InfoBase Conference Papers
StatePublished - Dec 1 2010
EventLaser Science, LS 2010 - Rochester, NY, United States
Duration: Oct 24 2010Oct 28 2010

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Koukourakis, N., Funke, D. A., Gerhardt, N. C., Hofmann, M. R., Kunert, B., Liebich, S., Zinnkann, S., Zimprich, M., Beyer, A., Chatterjee, S., Bückers, C., Koch, S. W., Volz, K., & Stolz, W. (2010). Modal gain analysis of GaNAsP heterostructures on silicon. Optics InfoBase Conference Papers.