Modal gain analysis of GaNAsP heterostructures on silicon

Nektarios Koukourakis, Dominic A. Funke, Nils C. Gerhardt, Martin R. Hofmann, B. Kunert, S. Liebich, S. Zinnkann, M. Zimprich, A. Beyer, S. Chatterjee, C. Bückers, Stephan W Koch, K. Volz, W. Stolz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present modal gain measurements of GaNAsP multiple quantum well structures grown lattice-matched on silicon using the stripe-length method. High modal gain values of up to 100 cm-1 are observed at room temperature.

Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
StatePublished - 2010
Externally publishedYes
EventLaser Science, LS 2010 - Rochester, NY, United States
Duration: Oct 24 2010Oct 28 2010

Other

OtherLaser Science, LS 2010
CountryUnited States
CityRochester, NY
Period10/24/1010/28/10

Fingerprint

Gain measurement
Semiconductor quantum wells
Heterojunctions
Silicon
silicon
quantum wells
Temperature
room temperature

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Koukourakis, N., Funke, D. A., Gerhardt, N. C., Hofmann, M. R., Kunert, B., Liebich, S., ... Stolz, W. (2010). Modal gain analysis of GaNAsP heterostructures on silicon. In Optics InfoBase Conference Papers

Modal gain analysis of GaNAsP heterostructures on silicon. / Koukourakis, Nektarios; Funke, Dominic A.; Gerhardt, Nils C.; Hofmann, Martin R.; Kunert, B.; Liebich, S.; Zinnkann, S.; Zimprich, M.; Beyer, A.; Chatterjee, S.; Bückers, C.; Koch, Stephan W; Volz, K.; Stolz, W.

Optics InfoBase Conference Papers. 2010.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Koukourakis, N, Funke, DA, Gerhardt, NC, Hofmann, MR, Kunert, B, Liebich, S, Zinnkann, S, Zimprich, M, Beyer, A, Chatterjee, S, Bückers, C, Koch, SW, Volz, K & Stolz, W 2010, Modal gain analysis of GaNAsP heterostructures on silicon. in Optics InfoBase Conference Papers. Laser Science, LS 2010, Rochester, NY, United States, 10/24/10.
Koukourakis N, Funke DA, Gerhardt NC, Hofmann MR, Kunert B, Liebich S et al. Modal gain analysis of GaNAsP heterostructures on silicon. In Optics InfoBase Conference Papers. 2010
Koukourakis, Nektarios ; Funke, Dominic A. ; Gerhardt, Nils C. ; Hofmann, Martin R. ; Kunert, B. ; Liebich, S. ; Zinnkann, S. ; Zimprich, M. ; Beyer, A. ; Chatterjee, S. ; Bückers, C. ; Koch, Stephan W ; Volz, K. ; Stolz, W. / Modal gain analysis of GaNAsP heterostructures on silicon. Optics InfoBase Conference Papers. 2010.
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abstract = "We present modal gain measurements of GaNAsP multiple quantum well structures grown lattice-matched on silicon using the stripe-length method. High modal gain values of up to 100 cm-1 are observed at room temperature.",
author = "Nektarios Koukourakis and Funke, {Dominic A.} and Gerhardt, {Nils C.} and Hofmann, {Martin R.} and B. Kunert and S. Liebich and S. Zinnkann and M. Zimprich and A. Beyer and S. Chatterjee and C. B{\"u}ckers and Koch, {Stephan W} and K. Volz and W. Stolz",
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AU - Koukourakis, Nektarios

AU - Funke, Dominic A.

AU - Gerhardt, Nils C.

AU - Hofmann, Martin R.

AU - Kunert, B.

AU - Liebich, S.

AU - Zinnkann, S.

AU - Zimprich, M.

AU - Beyer, A.

AU - Chatterjee, S.

AU - Bückers, C.

AU - Koch, Stephan W

AU - Volz, K.

AU - Stolz, W.

PY - 2010

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M3 - Conference contribution

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