Modal gain and time-resolved photoluminescence of Ga(NAsP) heterostructures pseudomorphically grown on Silicon (001) substrate

Nektarios Koukourakis, Dominic A. Funke, Nils C. Gerhardt, Martin R. Hofmann, B. Kunert, S. Liebich, D. Trusheim, M. Zimprich, C. Bückers, S. W. Koch, K. Volz, W. Stolz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present room-temperature gain (up to 80 cm-1) and time-resolved photoluminescence measurements in Ga(NAsP) grown lattice-matched on silicon substrate. We find a strong impact of the barrier-growth conditions on the optical quality of the material.

Original languageEnglish (US)
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2011
StatePublished - Dec 1 2011
EventQuantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States
Duration: May 1 2011May 6 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2011
CountryUnited States
CityBaltimore, MD
Period5/1/115/6/11

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Koukourakis, N., Funke, D. A., Gerhardt, N. C., Hofmann, M. R., Kunert, B., Liebich, S., Trusheim, D., Zimprich, M., Bückers, C., Koch, S. W., Volz, K., & Stolz, W. (2011). Modal gain and time-resolved photoluminescence of Ga(NAsP) heterostructures pseudomorphically grown on Silicon (001) substrate. In Quantum Electronics and Laser Science Conference, QELS 2011 (Optics InfoBase Conference Papers).