Model of the metal-ferroelectric-metal capacitor

G. Teowee, D. R. Uhlmann

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

Abstract

Ferroelectric (FE) films especially PZT films, have received increasing attention for microelectric applications such as ferroelectric memory and high density DRAM. There has been significant progress in the preparation of high quality PZT films involving wet chemical land physical vapor deposition techniques. Metal-FE-metal structures, typified by Pt-PZT-Pt capacitors, are the basic building blocks for the ferroelectric devices. The leakage currents of the capacitors are known to be non-ohmic and exhibit an exponential dependence on applied voltage.

Original languageEnglish (US)
Pages (from-to)415-422
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume310
StatePublished - Dec 1 1993
Externally publishedYes
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 14 1993Apr 16 1993

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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