A microscopic many-body theory driven design and optimization supports the experimental demonstration of sub-100 fs pulse duration directly from a semiconductor laser. A passively modelocked vertical external cavity surface emitting laser producing a pulse duration of 95 fs at a central wavelength of 1025 nm is demonstrated. The semiconductor gain and absorber structures used in the experiment are numerically optimized by modelling the pulse formation dynamic of the system. The resulting structure design is described in detail and the physical limitations in terms of pulse duration and power are discussed. Using a ring cavity geometry, a stable colliding pulse modelocking regime with an output power of 90 mW per beam at a repetition rate of 2.2 GHz is demonstrated. The output pulses are thoroughly characterized and are in good agreement with our predictive model.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)