Modeling and Experimental Result Analysis for High Power VECSELs

A. R. Zakharian, J. Hader, J. V. Moloney, S. W. Koch, S. Lutgen, P. Brick, T. Albrecht, S. Grötsch, J. Luft, W. Späth

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

We present a comparison of experimental and microscopically based model results for optically pumped vertical external cavity surface emitting semiconductor lasers. The quantum well gain model is based on a quantitative ab-initio approach that allows calculation of a complex material susceptibility dependence on the wavelength, carrier density and lattice temperature. The gain model is coupled to the macroscopic thermal transport, spatially resolved in both the radial and longitudinal directions, with temperature and carrier density dependent pump absorption. The radial distribution of the refractive index and gain due to temperature variation are computed. Thermal management issues, highlighted by the experimental data, are discussed. Experimental results indicate a critical dependence of the input power, at which thermal roll-over occurs, on the thermal resistance of the device. This requires minimization of the substrate thickness and optimization of the design and placement of the heatsink. Dependence of the model results on the radiative and non-radiative carrier recombination lifetimes and cavity losses are evaluated.

Original languageEnglish (US)
Pages (from-to)104-110
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4993
DOIs
StatePublished - Nov 20 2003
EventHigh-Power Fiber and Semiconductor Lasers - San Jose, CA, United States
Duration: Jan 27 2003Jan 27 2003

Keywords

  • Optically pumped semiconductor disc laser
  • VECSEL

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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