Modeling copper CMP removal rate dependency on wafer pressure, velocity, and dissolved oxygen concentration

Darren Denardis, Toshiro Doi, Brent Hiskey, Koichiro Ichikawa, Daizo Ichikawa, Ara Philipossian

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A controlled atmosphere polishing system (CAP) was used to identify differences in copper chemical mechanical polishing (CMP) removal characteristics by changing oxygen partial pressure. A two-step kinetic mechanism was proposed, including a copper surface passivation layer formation and subsequent removal. A semiempirical, two-parameter model has been developed to simulate removal rates for multiple wafer pressures, pad-wafer velocities, and oxygen concentrations. The model accurately predicts removal trends with calculated root-mean-square errors of 77-125 Amin. A major advantage of the CAP system is that a point-of-use gaseous oxidant was successfully used to polish copper substrates, and slight changes in oxidant partial pressure were found to significantly affect removal rate trends.

Original languageEnglish (US)
Pages (from-to)G428-G436
JournalJournal of the Electrochemical Society
Volume153
Issue number5
DOIs
StatePublished - Apr 17 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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