Modeling high-power semiconductor lasers: From microscopic physics to device applications

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

A robust, modular and comprehensive simulation model, built on a first-principles microscopic physics basis, includes the fully time-dependent and spatially resolved internal optical, carrier and temperature fields within an arbitrary geometry edge-emitting high-power semiconductor laser device. The simulator is designed to run interactively on a multi-processor shared memory graphical supercomputer by utilizing a highly efficient algorithm running in parallel over multiple CPUs. The experimentally validated semiconductor optical response is computed using a microscopic approach that includes the relevant bandstructure of the Quantum Well and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account. The latter quantity is introduced into the simulator via a multidimensional look-up table that captures the local dependence of the gain and refractive index of the structure over a broad range of frequencies and carrier densities. The simulator is designed in a modular form so as to be able to include differing device geometries (broad area, flared, multiple contacts, arrays, ..), filters (DBR or DFB grating sections), index/gain-guiding, temperature and current profiles and so on. Results will be presented for both broad area and MOPA devices.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages120-127
Number of pages8
Volume3889
StatePublished - 2000
Externally publishedYes
EventAdvanced High-Power Lasers - Osaka, Jpn
Duration: Nov 1 1999Nov 5 1999

Other

OtherAdvanced High-Power Lasers
CityOsaka, Jpn
Period11/1/9911/5/99

Fingerprint

high power lasers
simulators
Semiconductor lasers
Physics
Simulators
semiconductor lasers
physics
supercomputers
Geometry
Supercomputers
profiles
geometry
confining
temperature profiles
Semiconductor quantum wells
Program processors
Carrier concentration
central processing units
Refractive index
Temperature distribution

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Moloney, J. V., Kolesik, M., Hader, J., & Koch, S. W. (2000). Modeling high-power semiconductor lasers: From microscopic physics to device applications. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3889, pp. 120-127). Society of Photo-Optical Instrumentation Engineers.

Modeling high-power semiconductor lasers : From microscopic physics to device applications. / Moloney, Jerome V; Kolesik, Miroslav; Hader, Jorg; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3889 Society of Photo-Optical Instrumentation Engineers, 2000. p. 120-127.

Research output: Chapter in Book/Report/Conference proceedingChapter

Moloney, JV, Kolesik, M, Hader, J & Koch, SW 2000, Modeling high-power semiconductor lasers: From microscopic physics to device applications. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3889, Society of Photo-Optical Instrumentation Engineers, pp. 120-127, Advanced High-Power Lasers, Osaka, Jpn, 11/1/99.
Moloney JV, Kolesik M, Hader J, Koch SW. Modeling high-power semiconductor lasers: From microscopic physics to device applications. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3889. Society of Photo-Optical Instrumentation Engineers. 2000. p. 120-127
Moloney, Jerome V ; Kolesik, Miroslav ; Hader, Jorg ; Koch, Stephan W. / Modeling high-power semiconductor lasers : From microscopic physics to device applications. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3889 Society of Photo-Optical Instrumentation Engineers, 2000. pp. 120-127
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