Modeling high-power semiconductor lasers: From microscopic physics to device applications

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

A robust, modular and comprehensive simulation model, built on a first-principles microscopic physics basis, includes the fully time-dependent and spatially resolved internal optical, carrier and temperature fields within an arbitrary geometry edge-emitting high-power semiconductor laser device. The simulator is designed to run interactively on a multi-processor shared memory graphical supercomputer by utilizing a highly efficient algorithm running in parallel over multiple CPUs. The experimentally validated semiconductor optical response is computed using a microscopic approach that includes the relevant bandstructure of the Quantum Well and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account. The latter quantity is introduced into the simulator via a multidimensional look-up table that captures the local dependence of the gain and refractive index of the structure over a broad range of frequencies and carrier densities. The simulator is designed in a modular form so as to be able to include differing device geometries (broad area, flared, multiple contacts, arrays, ..), filters (DBR or DFB grating sections), index/gain-guiding, temperature and current profiles and so on. Results will be presented for both broad area and MOPA devices.

Original languageEnglish (US)
Pages (from-to)120-127
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3889
DOIs
StatePublished - 2000
EventAdvanced High-Power Lasers - Osaka, Jpn
Duration: Nov 1 1999Nov 5 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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