TY - JOUR
T1 - Modeling Interaction in Nanowire Growth Process Toward Improved Yield
AU - Aghdam, Faranak Fathi
AU - Liao, Haitao
AU - Huang, Qiang
N1 - Funding Information:
This work was supported in part by the National Science Foundation under Grant CMMI-1238301 and Grant CMMI-1055394. The authors would like to thank Dr. J. Dong, North Carolina State University, for his constructive suggestions and G. Gadea D?ez, Institut de Recerca en Energies de Catalunya, for providing the data used in the second numerical example.
PY - 2017/4
Y1 - 2017/4
N2 - Research on nanowire growth with patterned arrays of catalyst has shown that wire-to-wire spacing is an important factor affecting nanowire quality. To improve the process yield and the length uniformity of fabricated nanowires, it is important to reduce the resource competition between nanowires during the growth process. In this paper, we propose a physical-statistical nanowire-interaction model considering the shadowing effect and shared substrate diffusion area to determine the optimal pitch that would ensure the minimum competition between nanowires. A sigmoid function is used in the model, and the method of least squares is used to estimate the model parameters. The estimated model is then used to determine the optimal spatial arrangement of catalyst arrays. This work is an early attempt at the physical-statistical modeling of selective nanowire growth for the improvement of process yield. Note to Practitioners - This paper was motivated by the problem of how to determine the optimal pitch in a patterned nanowire growth process to reduce resource competition between nanowires during the growth process. Existing approaches generally deal with such problems through experiments, and most of them neglect the impact of competition on the growth yield. This paper proposes a physical-statistical approach to model the interaction between nanowires during growth and determine the optimal pitch. It should be noted that in some applications specific density or other requirements must be satisfied.
AB - Research on nanowire growth with patterned arrays of catalyst has shown that wire-to-wire spacing is an important factor affecting nanowire quality. To improve the process yield and the length uniformity of fabricated nanowires, it is important to reduce the resource competition between nanowires during the growth process. In this paper, we propose a physical-statistical nanowire-interaction model considering the shadowing effect and shared substrate diffusion area to determine the optimal pitch that would ensure the minimum competition between nanowires. A sigmoid function is used in the model, and the method of least squares is used to estimate the model parameters. The estimated model is then used to determine the optimal spatial arrangement of catalyst arrays. This work is an early attempt at the physical-statistical modeling of selective nanowire growth for the improvement of process yield. Note to Practitioners - This paper was motivated by the problem of how to determine the optimal pitch in a patterned nanowire growth process to reduce resource competition between nanowires during the growth process. Existing approaches generally deal with such problems through experiments, and most of them neglect the impact of competition on the growth yield. This paper proposes a physical-statistical approach to model the interaction between nanowires during growth and determine the optimal pitch. It should be noted that in some applications specific density or other requirements must be satisfied.
KW - Nanowire growth process modeling
KW - shadowing effect
KW - shared substrate diffusion
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U2 - 10.1109/TASE.2015.2499210
DO - 10.1109/TASE.2015.2499210
M3 - Article
AN - SCOPUS:85027728800
VL - 14
SP - 1139
EP - 1149
JO - IEEE Transactions on Automation Science and Engineering
JF - IEEE Transactions on Automation Science and Engineering
SN - 1545-5955
IS - 2
ER -