Modeling of a thin film pyroelectric pixel

Transient results

G. Teowee, Donald R Uhlmann

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

Pyroelectric thin films are receiving increasing attention for the next generation of integrated room temperature uncooled IR arrays. Pixel size and NETD (net equivalent temperature difference) of 50 μm and 0.005K are projected respectively. In this study, the 1-D transient response of a pixel consisting of black absorber, pyroelectric, Pt, TiO2, SiO2 and Si are performed. Thermal conduction and radiative transfer are assumed to take place across this stack and at the Si substrate-air interface, respectively. The effects of individual film thickness, IR chopping frequency, thermal conductivity of the thermal barrier layer and substrate thickness on the pyroelectric response are investigated.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages421-429
Number of pages9
Volume22
Edition1-4
StatePublished - 1998

Fingerprint

Pixels
pixels
Thin films
Radiative transfer
transient response
Substrates
barrier layers
thin films
Transient analysis
radiative transfer
Film thickness
Thermal conductivity
temperature gradients
absorbers
film thickness
thermal conductivity
conduction
Temperature
air
room temperature

Keywords

  • Ferroelectric
  • Films
  • IR arrays
  • Modeling
  • Pyroelectric

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Teowee, G., & Uhlmann, D. R. (1998). Modeling of a thin film pyroelectric pixel: Transient results. In Integrated Ferroelectrics (1-4 ed., Vol. 22, pp. 421-429)

Modeling of a thin film pyroelectric pixel : Transient results. / Teowee, G.; Uhlmann, Donald R.

Integrated Ferroelectrics. Vol. 22 1-4. ed. 1998. p. 421-429.

Research output: Chapter in Book/Report/Conference proceedingChapter

Teowee, G & Uhlmann, DR 1998, Modeling of a thin film pyroelectric pixel: Transient results. in Integrated Ferroelectrics. 1-4 edn, vol. 22, pp. 421-429.
Teowee G, Uhlmann DR. Modeling of a thin film pyroelectric pixel: Transient results. In Integrated Ferroelectrics. 1-4 ed. Vol. 22. 1998. p. 421-429
Teowee, G. ; Uhlmann, Donald R. / Modeling of a thin film pyroelectric pixel : Transient results. Integrated Ferroelectrics. Vol. 22 1-4. ed. 1998. pp. 421-429
@inbook{bc7e0af138c44e0e95c93dc6212556a4,
title = "Modeling of a thin film pyroelectric pixel: Transient results",
abstract = "Pyroelectric thin films are receiving increasing attention for the next generation of integrated room temperature uncooled IR arrays. Pixel size and NETD (net equivalent temperature difference) of 50 μm and 0.005K are projected respectively. In this study, the 1-D transient response of a pixel consisting of black absorber, pyroelectric, Pt, TiO2, SiO2 and Si are performed. Thermal conduction and radiative transfer are assumed to take place across this stack and at the Si substrate-air interface, respectively. The effects of individual film thickness, IR chopping frequency, thermal conductivity of the thermal barrier layer and substrate thickness on the pyroelectric response are investigated.",
keywords = "Ferroelectric, Films, IR arrays, Modeling, Pyroelectric",
author = "G. Teowee and Uhlmann, {Donald R}",
year = "1998",
language = "English (US)",
volume = "22",
pages = "421--429",
booktitle = "Integrated Ferroelectrics",
edition = "1-4",

}

TY - CHAP

T1 - Modeling of a thin film pyroelectric pixel

T2 - Transient results

AU - Teowee, G.

AU - Uhlmann, Donald R

PY - 1998

Y1 - 1998

N2 - Pyroelectric thin films are receiving increasing attention for the next generation of integrated room temperature uncooled IR arrays. Pixel size and NETD (net equivalent temperature difference) of 50 μm and 0.005K are projected respectively. In this study, the 1-D transient response of a pixel consisting of black absorber, pyroelectric, Pt, TiO2, SiO2 and Si are performed. Thermal conduction and radiative transfer are assumed to take place across this stack and at the Si substrate-air interface, respectively. The effects of individual film thickness, IR chopping frequency, thermal conductivity of the thermal barrier layer and substrate thickness on the pyroelectric response are investigated.

AB - Pyroelectric thin films are receiving increasing attention for the next generation of integrated room temperature uncooled IR arrays. Pixel size and NETD (net equivalent temperature difference) of 50 μm and 0.005K are projected respectively. In this study, the 1-D transient response of a pixel consisting of black absorber, pyroelectric, Pt, TiO2, SiO2 and Si are performed. Thermal conduction and radiative transfer are assumed to take place across this stack and at the Si substrate-air interface, respectively. The effects of individual film thickness, IR chopping frequency, thermal conductivity of the thermal barrier layer and substrate thickness on the pyroelectric response are investigated.

KW - Ferroelectric

KW - Films

KW - IR arrays

KW - Modeling

KW - Pyroelectric

UR - http://www.scopus.com/inward/record.url?scp=0032318524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032318524&partnerID=8YFLogxK

M3 - Chapter

VL - 22

SP - 421

EP - 429

BT - Integrated Ferroelectrics

ER -