Modeling of the extreme nonlinear optical response of semiconductor nanostructures

D. Golde, T. Meier, S. W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In extreme nonlinear optics the Rabi and transition frequencies are on the same order of magnitude. In this highly nonperturbative regime, the band dispersion characteristically modifies the response of semiconductor quantum wells and wires.

Original languageEnglish (US)
Title of host publicationInternational Conference on Ultrafast Phenomena, UP 2006
PublisherOptical Society of America
ISBN (Print)1557528101, 9781557528100
StatePublished - Jan 1 2006
EventInternational Conference on Ultrafast Phenomena, UP 2006 - Pacific Grove, CA, United States
Duration: Jul 31 2006Jul 31 2006

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherInternational Conference on Ultrafast Phenomena, UP 2006
CountryUnited States
CityPacific Grove, CA
Period7/31/067/31/06

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Golde, D., Meier, T., & Koch, S. W. (2006). Modeling of the extreme nonlinear optical response of semiconductor nanostructures. In International Conference on Ultrafast Phenomena, UP 2006 (Optics InfoBase Conference Papers). Optical Society of America.