Modeling of the extreme nonlinear optical response of semiconductor nanostructures

Daniel Golde, Torsten Meier, Stephan W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In extreme nonlinear optics the Rabi frequency is comparable to or even larger than the transition frequency. Numerical solutions of the semiconductor Bloch equations show that the response of semiconductor quantum wells and wires differs characteristically from that of a two-level system in this highly nonperturbative regime. The main reason for these differences is the continuous electronic dispersion, and, to a lesser degree, the Coulombic interaction effects.

Original languageEnglish (US)
Title of host publicationUltrafast Phenomena XV
Subtitle of host publicationProceedings of the 15th International Conference
Pages689-691
Number of pages3
DOIs
StatePublished - Dec 1 2007

Publication series

NameSpringer Series in Chemical Physics
Volume88
ISSN (Print)0172-6218

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Golde, D., Meier, T., & Koch, S. W. (2007). Modeling of the extreme nonlinear optical response of semiconductor nanostructures. In Ultrafast Phenomena XV: Proceedings of the 15th International Conference (pp. 689-691). (Springer Series in Chemical Physics; Vol. 88). https://doi.org/10.1007/978-3-540-68781-8-221