Modeling of ultrashort pulse generation in mode-locked VECSELs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present a study of various models for the mode-locked pulse dynamics in a vertical external-cavity surface emitting laser with a saturable absorber. The semiconductor Bloch equations are used to model microscopically the light-matter interaction and the carrier dynamics. Maxwell's equations describe the pulse propagation. Scattering contributions due to higher order correlation effects are approximated using effective rates that are found from a comparison to solving the microscopic scattering equations on the second Born-Markov level. It is shown that the simulations result in the same mode-locked final state whether the system is initialized with a test pulse close to the final mode-locked pulse or the full field build-up from statistical noise is considered. The influence of the cavity design is studied. The longest pulses are found for a standard V-cavity while a linear cavity and a V-cavity with an high reflectivity mirror in the middle are shown to produce similar, much shorter pulses.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXIV
PublisherSPIE
Volume9742
ISBN (Electronic)9781628419771
DOIs
StatePublished - 2016
EventPhysics and Simulation of Optoelectronic Devices XXIV - San Francisco, United States
Duration: Feb 15 2016Feb 18 2016

Other

OtherPhysics and Simulation of Optoelectronic Devices XXIV
CountryUnited States
CitySan Francisco
Period2/15/162/18/16

Fingerprint

Ultrashort Pulse
Laser modes
Ultrashort pulses
Scattering
Cavity
Saturable absorbers
Surface emitting lasers
Maxwell equations
cavities
pulses
Modeling
Laser pulses
Mirrors
Semiconductor materials
Saturable Absorber
External Cavity
Short Pulse
Reflectivity
Maxwell's equations
Semiconductors

Keywords

  • GaAs
  • Mode-Locking
  • RPG
  • Semiconductor Bloch Equations
  • Semiconductor Laser
  • SESAM
  • Simulation
  • VECSELs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kilen, I., Koch, S. W., Hader, J., & Moloney, J. V. (2016). Modeling of ultrashort pulse generation in mode-locked VECSELs. In Physics and Simulation of Optoelectronic Devices XXIV (Vol. 9742). [97420H] SPIE. https://doi.org/10.1117/12.2217147

Modeling of ultrashort pulse generation in mode-locked VECSELs. / Kilen, I.; Koch, Stephan W; Hader, Jorg; Moloney, Jerome V.

Physics and Simulation of Optoelectronic Devices XXIV. Vol. 9742 SPIE, 2016. 97420H.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kilen, I, Koch, SW, Hader, J & Moloney, JV 2016, Modeling of ultrashort pulse generation in mode-locked VECSELs. in Physics and Simulation of Optoelectronic Devices XXIV. vol. 9742, 97420H, SPIE, Physics and Simulation of Optoelectronic Devices XXIV, San Francisco, United States, 2/15/16. https://doi.org/10.1117/12.2217147
Kilen I, Koch SW, Hader J, Moloney JV. Modeling of ultrashort pulse generation in mode-locked VECSELs. In Physics and Simulation of Optoelectronic Devices XXIV. Vol. 9742. SPIE. 2016. 97420H https://doi.org/10.1117/12.2217147
Kilen, I. ; Koch, Stephan W ; Hader, Jorg ; Moloney, Jerome V. / Modeling of ultrashort pulse generation in mode-locked VECSELs. Physics and Simulation of Optoelectronic Devices XXIV. Vol. 9742 SPIE, 2016.
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