Modeling semiconductor lasers: Simulation of devices based on microscopic physics

J. V. Moloney, M. Kolesik, M. Matus, K. J. Kasunic

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

We are currently developing 2 semiconductor laser simulators built on a first-principles microscopic physics basis. The first is a PC-based, plane-wave simulator for both component and system-level design of low-power optoelectronic devices. The second is a supercomputer-based simulator that models the fully time-dependent and spatially-resolved optical, carrier, and temperature fields for arbitrary geometry, high-power semiconductor lasers. Both simulators are based on a comprehensive gain model that includes the relevant bandstructure of the quantum wells and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account.

Original languageEnglish (US)
Pages (from-to)I/-
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3944
StatePublished - Jan 1 2000
EventPhysics and Simulation of Optoelectronic Devices VIII - San Jose, CA, USA
Duration: Jan 24 2000Jan 28 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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