Modeling semiconductor lasers: Simulation of devices based on microscopic physics

Jerome V Moloney, Miroslav Kolesik, M. Matus, K. J. Kasunic

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We are currently developing 2 semiconductor laser simulators built on a first-principles microscopic physics basis. The first is a PC-based, plane-wave simulator for both component and system-level design of low-power optoelectronic devices. The second is a supercomputer-based simulator that models the fully time-dependent and spatially-resolved optical, carrier, and temperature fields for arbitrary geometry, high-power semiconductor lasers. Both simulators are based on a comprehensive gain model that includes the relevant bandstructure of the quantum wells and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Volume3944
Publication statusPublished - 2000
EventPhysics and Simulation of Optoelectronic Devices VIII - San Jose, CA, USA
Duration: Jan 24 2000Jan 28 2000

Other

OtherPhysics and Simulation of Optoelectronic Devices VIII
CitySan Jose, CA, USA
Period1/24/001/28/00

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Moloney, J. V., Kolesik, M., Matus, M., & Kasunic, K. J. (2000). Modeling semiconductor lasers: Simulation of devices based on microscopic physics. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3944). Society of Photo-Optical Instrumentation Engineers.