Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics

U. K. Khankhoje, S. H. Kim, B. C. Richards, J. Hendrickson, J. Sweet, J. D. Olitzky, G. Khitrova, H. M. Gibbs, A. Scherer

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.

Original languageEnglish (US)
Article number065202
JournalNanotechnology
Volume21
Issue number6
DOIs
StatePublished - Feb 2 2010

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Khankhoje, U. K., Kim, S. H., Richards, B. C., Hendrickson, J., Sweet, J., Olitzky, J. D., Khitrova, G., Gibbs, H. M., & Scherer, A. (2010). Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics. Nanotechnology, 21(6), [065202]. https://doi.org/10.1088/0957-4484/21/6/065202