Models for magnetoresistance in tunnel junctions

Shufeng Zhang, P. M. Levy

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

We show there are putative pitfalls when one predicts the magnetoresistance of magnetic tunnel junctions (JMR) based on different toy models. Amongst them are the sensitivity of the MR to the details of the profile of the potential barrier between the metallic electrodes and the insulating barrier, and the common assumption of only one band of electrons. We indicate the ingredients that are necessary to obtain a more complete description of the JMR of magnetic tunnel junctions.

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Keywords

  • 73.40.Gk Tunneling
  • 73.50.Jt galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
  • 75.70.Cn Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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