Modification of spontaneous emission rates in shallow ridge 8.3 nm Erbium doped silica slot waveguides

Ravi S. Tummidi, Robert M. Pafchek, Kangbaek Kim, Thomas L Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We show that conventional expressions for spontaneous emission into waveguide modes correctly predict broadband (non-resonant) Purcell enhancement in Slot waveguides. Time resolved photoluminescence measurements on Er-doped ultra-thin 8.3 nm slot channel waveguides corroborate this effect.

Original languageEnglish (US)
Title of host publicationIEEE International Conference on Group IV Photonics GFP
Pages226-228
Number of pages3
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 6th IEEE International Conference on Group IV Photonics, GFP '09 - San Francisco, CA, United States
Duration: Sep 9 2009Sep 11 2009

Other

Other2009 6th IEEE International Conference on Group IV Photonics, GFP '09
CountryUnited States
CitySan Francisco, CA
Period9/9/099/11/09

Fingerprint

Erbium
Spontaneous emission
Silicon Dioxide
Waveguides
Silica
Photoluminescence

Keywords

  • Dielectric waveguides
  • Integrated optoelectronics
  • Spontaneous emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Tummidi, R. S., Pafchek, R. M., Kim, K., & Koch, T. L. (2009). Modification of spontaneous emission rates in shallow ridge 8.3 nm Erbium doped silica slot waveguides. In IEEE International Conference on Group IV Photonics GFP (pp. 226-228). [5338383] https://doi.org/10.1109/GROUP4.2009.5338383

Modification of spontaneous emission rates in shallow ridge 8.3 nm Erbium doped silica slot waveguides. / Tummidi, Ravi S.; Pafchek, Robert M.; Kim, Kangbaek; Koch, Thomas L.

IEEE International Conference on Group IV Photonics GFP. 2009. p. 226-228 5338383.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tummidi, RS, Pafchek, RM, Kim, K & Koch, TL 2009, Modification of spontaneous emission rates in shallow ridge 8.3 nm Erbium doped silica slot waveguides. in IEEE International Conference on Group IV Photonics GFP., 5338383, pp. 226-228, 2009 6th IEEE International Conference on Group IV Photonics, GFP '09, San Francisco, CA, United States, 9/9/09. https://doi.org/10.1109/GROUP4.2009.5338383
Tummidi RS, Pafchek RM, Kim K, Koch TL. Modification of spontaneous emission rates in shallow ridge 8.3 nm Erbium doped silica slot waveguides. In IEEE International Conference on Group IV Photonics GFP. 2009. p. 226-228. 5338383 https://doi.org/10.1109/GROUP4.2009.5338383
Tummidi, Ravi S. ; Pafchek, Robert M. ; Kim, Kangbaek ; Koch, Thomas L. / Modification of spontaneous emission rates in shallow ridge 8.3 nm Erbium doped silica slot waveguides. IEEE International Conference on Group IV Photonics GFP. 2009. pp. 226-228
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