Modification of spontaneous emission rates in shallow ridge 8.3 nm Erbium doped silica slot waveguides

Ravi S. Tummidi, Robert M. Pafchek, Kangbaek Kim, Thomas L. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We show that conventional expressions for spontaneous emission into waveguide modes correctly predict broadband (non-resonant) Purcell enhancement in Slot waveguides. Time resolved photoluminescence measurements on Er-doped ultra-thin 8.3 nm slot channel waveguides corroborate this effect.

Original languageEnglish (US)
Title of host publication2009 6th IEEE International Conference on Group IV Photonics, GFP '09
Pages226-228
Number of pages3
DOIs
StatePublished - Dec 1 2009
Externally publishedYes
Event2009 6th IEEE International Conference on Group IV Photonics, GFP '09 - San Francisco, CA, United States
Duration: Sep 9 2009Sep 11 2009

Publication series

NameIEEE International Conference on Group IV Photonics GFP
ISSN (Print)1949-2081

Other

Other2009 6th IEEE International Conference on Group IV Photonics, GFP '09
CountryUnited States
CitySan Francisco, CA
Period9/9/099/11/09

Keywords

  • Dielectric waveguides
  • Integrated optoelectronics
  • Spontaneous emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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    Tummidi, R. S., Pafchek, R. M., Kim, K., & Koch, T. L. (2009). Modification of spontaneous emission rates in shallow ridge 8.3 nm Erbium doped silica slot waveguides. In 2009 6th IEEE International Conference on Group IV Photonics, GFP '09 (pp. 226-228). [5338383] (IEEE International Conference on Group IV Photonics GFP). https://doi.org/10.1109/GROUP4.2009.5338383