Molecular-dynamics simulation of thin-film growth and relaxation

Pierre A Deymier, R. B. Sargent

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We simulate the growth of a thin film in two dimensions with a computer implementation of the molecular dynamics (MD) method. The system consists of a krypton substrate maintained at a temperature of about 10 degrees Kelvin, toward which argon atoms are periodically directed (with a velocity corresponding to 120 degrees Kelvin). The resulting argon film follows the (horizontal) spacing of the krypton lattice until the thickness of the film approaches an average thickness of about 10 monolayers. As deposition proceeds, the configuration of the film changes to incorporate an edge misfit dislocation at the film-substrate interface; this relieves the interfacial stress. We also apply the MD method to study the relaxation of thin-film structures predicted by a hard-disk growth model. We consider two variations of the growth model; the first is similar to that described by Henderson et al., the second is a variation which incorporates the effect of surface diffusion. The voids in the relatively open microstructure predicted by the Henderson model are very effective in relieving interfacial stress. The numerous lattice defects (grain boundaries, dislocations, and vacancies) in the denser microstructure predicted by the second type of hard-disk model result in a film with high stress.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsMichael R. Jacobson
PublisherPubl by Int Soc for Optical Engineering
Pages120-130
Number of pages11
Volume1324
StatePublished - 1990
EventModeling of Optical Thin Films II - San Diego, CA, USA
Duration: Jul 12 1990Jul 13 1990

Other

OtherModeling of Optical Thin Films II
CitySan Diego, CA, USA
Period7/12/907/13/90

Fingerprint

Film growth
Molecular dynamics
molecular dynamics
Thin films
Computer simulation
thin films
Krypton
Hard disk storage
krypton
Dislocations (crystals)
simulation
Argon
argon
relieving
microstructure
Microstructure
Surface diffusion
Crystal defects
edge dislocations
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Deymier, P. A., & Sargent, R. B. (1990). Molecular-dynamics simulation of thin-film growth and relaxation. In M. R. Jacobson (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1324, pp. 120-130). Publ by Int Soc for Optical Engineering.

Molecular-dynamics simulation of thin-film growth and relaxation. / Deymier, Pierre A; Sargent, R. B.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Michael R. Jacobson. Vol. 1324 Publ by Int Soc for Optical Engineering, 1990. p. 120-130.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Deymier, PA & Sargent, RB 1990, Molecular-dynamics simulation of thin-film growth and relaxation. in MR Jacobson (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1324, Publ by Int Soc for Optical Engineering, pp. 120-130, Modeling of Optical Thin Films II, San Diego, CA, USA, 7/12/90.
Deymier PA, Sargent RB. Molecular-dynamics simulation of thin-film growth and relaxation. In Jacobson MR, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1324. Publ by Int Soc for Optical Engineering. 1990. p. 120-130
Deymier, Pierre A ; Sargent, R. B. / Molecular-dynamics simulation of thin-film growth and relaxation. Proceedings of SPIE - The International Society for Optical Engineering. editor / Michael R. Jacobson. Vol. 1324 Publ by Int Soc for Optical Engineering, 1990. pp. 120-130
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