Monolithic planar Ge: Be arrays

M. J. Scutero, E. T. Young, T. E. Mimer, G. H. Rieke, E. E. Hailer, J. Beeman, P. I. Zapella, J. W. Slemmons

Research output: Contribution to journalConference article

Abstract

As part of a program to extend the wavelength response of infrared array technology beyond the cutoff of extrinsic silicon photoconductivity, we have calculated the optimum parameters for a front-illuminated two dimensional array of Ge:Be detectors. Detector arrays to this prescription have been produced by indium bump bonding onto sapphire fanouts. We report a preliminary performance evaluation of these arrays.

Original languageEnglish (US)
Pages (from-to)78-87
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1946
DOIs
StatePublished - Oct 20 1993
EventInfrared Detectors and Instrumentation 1993 - Orlando, United States
Duration: Apr 11 1993Apr 16 1993

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Scutero, M. J., Young, E. T., Mimer, T. E., Rieke, G. H., Hailer, E. E., Beeman, J., Zapella, P. I., & Slemmons, J. W. (1993). Monolithic planar Ge: Be arrays. Proceedings of SPIE - The International Society for Optical Engineering, 1946, 78-87. https://doi.org/10.1117/12.158662