Monte Carlo simulation of silicon photomultiplier output in response to scintillation induced light

Abhinav K. Jha, Matthew A Kupinski, Herman T. Van Dam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The response of a Silicon Photomultiplier (SiPM) to optical signals is affected by many factors including optical cross talk, afterpulsing, dark current, detector dead time, recovery time and gain. Many of these parameters vary with over-voltage. When used to detect scintillation light, it is difficult to relate the response of the SiPM with the incident light and the relationship can be highly nonlinear. In this paper, we propose a Monte Carlo (MC) model for simulating the response of the SiPM to scintillation induced light pulses, which can be used to relate the optical signal with the SiPM response. Developing further on the previous works in this field, the model simulates the various aspects of SiPM response, including photon detection efficiency, recovery time, gain variation and dead time while accounting for the temporal and statistical distribution of the incident light, optical cross-talk, afterpulsing and dark current. It also considers the variation of the different SiPM parameters with varying over-voltage. We have also derived analytic expressions for the single photon response and the voltage drop across the quenching resistance, that help in accurate simulation of the SiPM response. The model compares well with the measurements on a SiPM based scintillation detector. It is also in agreement with the expected mathematical response when the input is an instantaneous light pulse.

Original languageEnglish (US)
Title of host publicationIEEE Nuclear Science Symposium Conference Record
Pages1693-1696
Number of pages4
DOIs
StatePublished - 2012
Event2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 - Valencia, Spain
Duration: Oct 23 2011Oct 29 2011

Other

Other2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
CountrySpain
CityValencia
Period10/23/1110/29/11

Fingerprint

Silicon
scintillation
Light
output
silicon
simulation
overvoltage
dark current
Photons
optical communication
recovery
Statistical Distributions
temporal distribution
detectors
photons
pulses
statistical distributions
quenching
electric potential

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

Cite this

Jha, A. K., Kupinski, M. A., & Van Dam, H. T. (2012). Monte Carlo simulation of silicon photomultiplier output in response to scintillation induced light. In IEEE Nuclear Science Symposium Conference Record (pp. 1693-1696). [6154662] https://doi.org/10.1109/NSSMIC.2011.6154662

Monte Carlo simulation of silicon photomultiplier output in response to scintillation induced light. / Jha, Abhinav K.; Kupinski, Matthew A; Van Dam, Herman T.

IEEE Nuclear Science Symposium Conference Record. 2012. p. 1693-1696 6154662.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jha, AK, Kupinski, MA & Van Dam, HT 2012, Monte Carlo simulation of silicon photomultiplier output in response to scintillation induced light. in IEEE Nuclear Science Symposium Conference Record., 6154662, pp. 1693-1696, 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011, Valencia, Spain, 10/23/11. https://doi.org/10.1109/NSSMIC.2011.6154662
Jha, Abhinav K. ; Kupinski, Matthew A ; Van Dam, Herman T. / Monte Carlo simulation of silicon photomultiplier output in response to scintillation induced light. IEEE Nuclear Science Symposium Conference Record. 2012. pp. 1693-1696
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