Morphological stability analysis of polycrystalline interconnects under the influence of electromigration

Katerina E Aifantis, S. A. Hackney

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Failure due to electromigration is one of the limiting factors encountered in reliability of integrated circuits. The key to fully understanding the morphological changes in metal interconnect lines in the presence of an electric field is to account for the variations of the electromigration flux as a function of the underlying factors, such as the microstructure. Although there is significant experimental and numerical simulation evidence documenting that grain structure is related to electromigration damage, a general analytical treatment that can explicitly account for such microstructure is lacking. In the present study the perturbation method is employed for the first time to the electromigration process in order to develop a general analysis of how morphological stability is correlated to microstructure induced spatial variations in the effective diffusivity.

Original languageEnglish (US)
Pages (from-to)98-102
Number of pages5
JournalReviews on Advanced Materials Science
Volume19
Issue number1-2
StatePublished - Feb 2009
Externally publishedYes

Fingerprint

Electromigration
electromigration
microstructure
Microstructure
Crystal microstructure
diffusivity
integrated circuits
Integrated circuits
Metals
Electric fields
Fluxes
damage
perturbation
electric fields
Computer simulation
metals
simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Morphological stability analysis of polycrystalline interconnects under the influence of electromigration. / Aifantis, Katerina E; Hackney, S. A.

In: Reviews on Advanced Materials Science, Vol. 19, No. 1-2, 02.2009, p. 98-102.

Research output: Contribution to journalArticle

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