Multi-band bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells

Quasi-equilibrinm excitation dependent optical probe spectra, of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k · p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSc/ZnSe and CdZnSe/MgZnSSe semiconductor quantum-well systems.