Multi-band bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells

A. Girndt; F. Jahnke; A. Knorr; S. w. Koch; W. w. Chow

doi:10.1002/1521-3951(199708)202:2<725::AID-PSSB725>3.0.CO;2-K

Multi-band bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells

A. Girndt, F. Jahnke, A. Knorr, S. w. Koch, W. w. Chow

Optical Sciences, College of

Research output: Contribution to journal › Article

79 Scopus citations

Abstract

Quasi-equilibrinm excitation dependent optical probe spectra, of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k · p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSc/ZnSe and CdZnSe/MgZnSSe semiconductor quantum-well systems.

Original language	English (US)
Pages (from-to)	725-739
Number of pages	15
Journal	Physica Status Solidi (B) Basic Research
Volume	202
Issue number	2
DOIs	https://doi.org/10.1002/1521-3951(199708)202:2<725::AID-PSSB725>3.0.CO;2-K
State	Published - Aug 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Girndt, A., Jahnke, F., Knorr, A., Koch, S. W., & Chow, W. W. (1997). Multi-band bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells. Physica Status Solidi (B) Basic Research, 202(2), 725-739. https://doi.org/10.1002/1521-3951(199708)202:2<725::AID-PSSB725>3.0.CO;2-K

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abstract = "Quasi-equilibrinm excitation dependent optical probe spectra, of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k · p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSc/ZnSe and CdZnSe/MgZnSSe semiconductor quantum-well systems.",

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AU - Girndt, A.

AU - Jahnke, F.

AU - Knorr, A.

AU - Koch, S. w.

AU - Chow, W. w.

PY - 1997/8

Y1 - 1997/8

N2 - Quasi-equilibrinm excitation dependent optical probe spectra, of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k · p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSc/ZnSe and CdZnSe/MgZnSSe semiconductor quantum-well systems.

AB - Quasi-equilibrinm excitation dependent optical probe spectra, of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k · p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSc/ZnSe and CdZnSe/MgZnSSe semiconductor quantum-well systems.

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