Abstract
Overheating has largely limited the performance of GaN-based high electron mobility transistors (HEMTs) as high-power and high-frequency electronic devices. In this work, a multi-length scale simulation technique is developed and demonstrated in a 2D GaN-on-SiC HEMT. For the transistor region, coupled electron and phonon Monte Carlo (MC) simulations are used to address the phonon emission by hot electrons and phonon transport within the ~10 μm transistor region. Away from the transistor, conventional Fourier analysis is invoked so that heat transfer across the whole macroscale device can still be considered. Energy-dependent electron and phonon transport, either within a material or across an interface, can be incorporated into the simulation. Beyond 2D HEMTs, this technique can be applied to more complicated 3D devices for accurate prediction of device characteristic.
Original language | English (US) |
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Journal | International Conference on Computational Methods for Thermal Problems |
Issue number | 217349 |
State | Published - Jan 1 2016 |
Event | 4th International Conference on Computational Methods for Thermal Problems, THERMACOMP 2016 - Atlanta, United States Duration: Jul 6 2016 → Jul 8 2016 |
Keywords
- Coupled electron and phonon MC simulations
- HEMT
- Multi-length scale
ASJC Scopus subject areas
- Fluid Flow and Transfer Processes
- Computational Mathematics
- Numerical Analysis