Multi-watt 1.25m quantum dot VECSEL

A. R. Albrecht, T. J. Rotter, C. P. Hains, A. Stintz, Jerome V Moloney, K. J. Malloy, G. Balakrishnan

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

An InAs quantum dot (QD) vertical external cavity surface-emitting laser (VECSEL) operating at a wavelength of 1.25m is reported. The gain region of the laser consists of a resonant periodic gain structure using single QD layers at 12 adjacent electrical field antinodes - a design optimised to reduce strain accumulation and improve QD quality. A fibre-coupled 808nm laser diode is used as a pump source and a spherical external mirror completes the cavity. Thermal management is accomplished by bonding the VECSEL sample to a chemical vapour deposition (CVD) diamond heat spreader. Continuous wave output powers in excess of 3 W have been achieved at room temperature. The broad emission spectrum makes this device an ideal candidate for wavelength tunable or modelocked applications.

Original languageEnglish (US)
Pages (from-to)856-857
Number of pages2
JournalElectronics Letters
Volume46
Issue number12
DOIs
StatePublished - Jun 10 2010

Fingerprint

Surface emitting lasers
Semiconductor quantum dots
Spreaders
Optical fiber coupling
Wavelength
Temperature control
Semiconductor lasers
Chemical vapor deposition
Diamonds
Mirrors
Pumps
Lasers
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Albrecht, A. R., Rotter, T. J., Hains, C. P., Stintz, A., Moloney, J. V., Malloy, K. J., & Balakrishnan, G. (2010). Multi-watt 1.25m quantum dot VECSEL. Electronics Letters, 46(12), 856-857. https://doi.org/10.1049/el.2010.0849

Multi-watt 1.25m quantum dot VECSEL. / Albrecht, A. R.; Rotter, T. J.; Hains, C. P.; Stintz, A.; Moloney, Jerome V; Malloy, K. J.; Balakrishnan, G.

In: Electronics Letters, Vol. 46, No. 12, 10.06.2010, p. 856-857.

Research output: Contribution to journalArticle

Albrecht, AR, Rotter, TJ, Hains, CP, Stintz, A, Moloney, JV, Malloy, KJ & Balakrishnan, G 2010, 'Multi-watt 1.25m quantum dot VECSEL', Electronics Letters, vol. 46, no. 12, pp. 856-857. https://doi.org/10.1049/el.2010.0849
Albrecht AR, Rotter TJ, Hains CP, Stintz A, Moloney JV, Malloy KJ et al. Multi-watt 1.25m quantum dot VECSEL. Electronics Letters. 2010 Jun 10;46(12):856-857. https://doi.org/10.1049/el.2010.0849
Albrecht, A. R. ; Rotter, T. J. ; Hains, C. P. ; Stintz, A. ; Moloney, Jerome V ; Malloy, K. J. ; Balakrishnan, G. / Multi-watt 1.25m quantum dot VECSEL. In: Electronics Letters. 2010 ; Vol. 46, No. 12. pp. 856-857.
@article{58e14b39570149038f955a7f95108309,
title = "Multi-watt 1.25m quantum dot VECSEL",
abstract = "An InAs quantum dot (QD) vertical external cavity surface-emitting laser (VECSEL) operating at a wavelength of 1.25m is reported. The gain region of the laser consists of a resonant periodic gain structure using single QD layers at 12 adjacent electrical field antinodes - a design optimised to reduce strain accumulation and improve QD quality. A fibre-coupled 808nm laser diode is used as a pump source and a spherical external mirror completes the cavity. Thermal management is accomplished by bonding the VECSEL sample to a chemical vapour deposition (CVD) diamond heat spreader. Continuous wave output powers in excess of 3 W have been achieved at room temperature. The broad emission spectrum makes this device an ideal candidate for wavelength tunable or modelocked applications.",
author = "Albrecht, {A. R.} and Rotter, {T. J.} and Hains, {C. P.} and A. Stintz and Moloney, {Jerome V} and Malloy, {K. J.} and G. Balakrishnan",
year = "2010",
month = "6",
day = "10",
doi = "10.1049/el.2010.0849",
language = "English (US)",
volume = "46",
pages = "856--857",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "12",

}

TY - JOUR

T1 - Multi-watt 1.25m quantum dot VECSEL

AU - Albrecht, A. R.

AU - Rotter, T. J.

AU - Hains, C. P.

AU - Stintz, A.

AU - Moloney, Jerome V

AU - Malloy, K. J.

AU - Balakrishnan, G.

PY - 2010/6/10

Y1 - 2010/6/10

N2 - An InAs quantum dot (QD) vertical external cavity surface-emitting laser (VECSEL) operating at a wavelength of 1.25m is reported. The gain region of the laser consists of a resonant periodic gain structure using single QD layers at 12 adjacent electrical field antinodes - a design optimised to reduce strain accumulation and improve QD quality. A fibre-coupled 808nm laser diode is used as a pump source and a spherical external mirror completes the cavity. Thermal management is accomplished by bonding the VECSEL sample to a chemical vapour deposition (CVD) diamond heat spreader. Continuous wave output powers in excess of 3 W have been achieved at room temperature. The broad emission spectrum makes this device an ideal candidate for wavelength tunable or modelocked applications.

AB - An InAs quantum dot (QD) vertical external cavity surface-emitting laser (VECSEL) operating at a wavelength of 1.25m is reported. The gain region of the laser consists of a resonant periodic gain structure using single QD layers at 12 adjacent electrical field antinodes - a design optimised to reduce strain accumulation and improve QD quality. A fibre-coupled 808nm laser diode is used as a pump source and a spherical external mirror completes the cavity. Thermal management is accomplished by bonding the VECSEL sample to a chemical vapour deposition (CVD) diamond heat spreader. Continuous wave output powers in excess of 3 W have been achieved at room temperature. The broad emission spectrum makes this device an ideal candidate for wavelength tunable or modelocked applications.

UR - http://www.scopus.com/inward/record.url?scp=77953600273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953600273&partnerID=8YFLogxK

U2 - 10.1049/el.2010.0849

DO - 10.1049/el.2010.0849

M3 - Article

AN - SCOPUS:77953600273

VL - 46

SP - 856

EP - 857

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 12

ER -