Multi-watt 1.25m quantum dot VECSEL

A. R. Albrecht, T. J. Rotter, C. P. Hains, A. Stintz, J. V. Moloney, K. J. Malloy, G. Balakrishnan

Research output: Contribution to journalArticle

21 Scopus citations


An InAs quantum dot (QD) vertical external cavity surface-emitting laser (VECSEL) operating at a wavelength of 1.25m is reported. The gain region of the laser consists of a resonant periodic gain structure using single QD layers at 12 adjacent electrical field antinodes - a design optimised to reduce strain accumulation and improve QD quality. A fibre-coupled 808nm laser diode is used as a pump source and a spherical external mirror completes the cavity. Thermal management is accomplished by bonding the VECSEL sample to a chemical vapour deposition (CVD) diamond heat spreader. Continuous wave output powers in excess of 3 W have been achieved at room temperature. The broad emission spectrum makes this device an ideal candidate for wavelength tunable or modelocked applications.

Original languageEnglish (US)
Pages (from-to)856-857
Number of pages2
JournalElectronics Letters
Issue number12
StatePublished - Jun 10 2010


ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Albrecht, A. R., Rotter, T. J., Hains, C. P., Stintz, A., Moloney, J. V., Malloy, K. J., & Balakrishnan, G. (2010). Multi-watt 1.25m quantum dot VECSEL. Electronics Letters, 46(12), 856-857.