An InAs quantum dot (QD) vertical external cavity surface-emitting laser (VECSEL) operating at a wavelength of 1.25m is reported. The gain region of the laser consists of a resonant periodic gain structure using single QD layers at 12 adjacent electrical field antinodes - a design optimised to reduce strain accumulation and improve QD quality. A fibre-coupled 808nm laser diode is used as a pump source and a spherical external mirror completes the cavity. Thermal management is accomplished by bonding the VECSEL sample to a chemical vapour deposition (CVD) diamond heat spreader. Continuous wave output powers in excess of 3 W have been achieved at room temperature. The broad emission spectrum makes this device an ideal candidate for wavelength tunable or modelocked applications.
ASJC Scopus subject areas
- Electrical and Electronic Engineering