Near-field radiative transfer between heavily doped SiGe at elevated temperatures

Z. M. Zhang, Eniko T Enikov, T. Makansi

Research output: Contribution to journalArticle

Abstract

SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. Fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux.

Original languageEnglish (US)
Article number092702
JournalJournal of Heat Transfer
Volume134
Issue number9
DOIs
StatePublished - 2012

Fingerprint

Radiative transfer
radiative transfer
near fields
heat transfer coefficients
Heat transfer coefficients
silicon alloys
radiative heat transfer
Doping (additives)
energy conversion
electrodynamics
Temperature
temperature
Optical constants
heat flux
Electric conductivity
Electrodynamics
Silicon
Energy conversion
solid state
Heat flux

Keywords

  • doped SiGe
  • high temperature
  • nanoscale
  • near field
  • thermal radiation

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Near-field radiative transfer between heavily doped SiGe at elevated temperatures. / Zhang, Z. M.; Enikov, Eniko T; Makansi, T.

In: Journal of Heat Transfer, Vol. 134, No. 9, 092702, 2012.

Research output: Contribution to journalArticle

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