Near-field radiative transfer between heavily doped SiGe at elevated temperatures

Z. M. Zhang, E. T. Enikov, T. Makansi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. The fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux.

Original languageEnglish (US)
Title of host publicationASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011
Pages283-291
Number of pages9
EditionPARTS A AND B
StatePublished - Dec 1 2011
EventASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011 - Denver, CO, United States
Duration: Nov 11 2011Nov 17 2011

Publication series

NameASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011
NumberPARTS A AND B
Volume10

Other

OtherASME 2011 International Mechanical Engineering Congress and Exposition, IMECE 2011
CountryUnited States
CityDenver, CO
Period11/11/1111/17/11

Keywords

  • Doped SiGe
  • High temperature
  • Nanoscale
  • Near field
  • Thermal radiation

ASJC Scopus subject areas

  • Mechanical Engineering

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