Near IR absorption in films of silicon containing oxygen

S. O. Sari, P. Hollingsworth Smith, H. Oona

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-μm oxygen transition and may suggest increased film impurity absorption in comparison to the bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given.

Original languageEnglish (US)
Pages (from-to)957-960
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume39
Issue number9
DOIs
StatePublished - 1978

    Fingerprint

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this