Near IR absorption in films of silicon containing oxygen

S. O. Sari, Peter Smith, H. Oona

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-μm oxygen transition and may suggest increased film impurity absorption in comparison to the bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given.

Original languageEnglish (US)
Pages (from-to)957-960
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume39
Issue number9
DOIs
StatePublished - 1978

Fingerprint

Silicon
Oxygen
silicon
oxygen
Impurities
impurities
Silanes
silicon films
silanes
oscillator strengths
Vapors
vapors
Crystalline materials
reflectance
Wavelength
shift
wavelengths
spectroscopy
x rays
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Near IR absorption in films of silicon containing oxygen. / Sari, S. O.; Smith, Peter; Oona, H.

In: Journal of Physics and Chemistry of Solids, Vol. 39, No. 9, 1978, p. 957-960.

Research output: Contribution to journalArticle

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