Negative domain wall contribution to the resistivity of microfabricated Fe wires

U. Ruediger, J. Yu, Shufeng Zhang, A. D. Kent, S. S P Parkin

Research output: Contribution to journalArticle

212 Citations (Scopus)

Abstract

The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 μm linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature, and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.

Original languageEnglish (US)
Pages (from-to)5639-5642
Number of pages4
JournalPhysical Review Letters
Volume80
Issue number25
StatePublished - 1998
Externally publishedYes

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domain wall
wire
electrical resistivity
ferromagnetic materials
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ruediger, U., Yu, J., Zhang, S., Kent, A. D., & Parkin, S. S. P. (1998). Negative domain wall contribution to the resistivity of microfabricated Fe wires. Physical Review Letters, 80(25), 5639-5642.

Negative domain wall contribution to the resistivity of microfabricated Fe wires. / Ruediger, U.; Yu, J.; Zhang, Shufeng; Kent, A. D.; Parkin, S. S P.

In: Physical Review Letters, Vol. 80, No. 25, 1998, p. 5639-5642.

Research output: Contribution to journalArticle

Ruediger, U, Yu, J, Zhang, S, Kent, AD & Parkin, SSP 1998, 'Negative domain wall contribution to the resistivity of microfabricated Fe wires', Physical Review Letters, vol. 80, no. 25, pp. 5639-5642.
Ruediger, U. ; Yu, J. ; Zhang, Shufeng ; Kent, A. D. ; Parkin, S. S P. / Negative domain wall contribution to the resistivity of microfabricated Fe wires. In: Physical Review Letters. 1998 ; Vol. 80, No. 25. pp. 5639-5642.
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