New wet cleaning strategies for obtaining highly reliable thin oxides

M. M. Heyns, S. Verhaverbeke, M. Meuris, P. W. Mertens, H. Schmidt, M. Kubota, A. Philipossian, K. Dillenbeck, D. Graef, A. Schnegg, R. de Blank

Research output: Chapter in Book/Report/Conference proceedingConference contribution

33 Scopus citations

Abstract

The effect of metal contamination and silicon surface defects on the gate oxide yield is investigated. The characteristics of various cleaning procedures are studied and correlated with the integrity of thin gate oxides. The standard wet cleaning recipe is optimized and a new cleaning strategy is proposed. Selective contamination experiments in chemicals and on Si-wafers are used to investigate the effect of small amounts of metal contaminants on the gate oxide integrity. It is found that the characteristics of the silicon substrate play a dominant role in this. HF-last processes are investigated and a new wet cleaning strategy is proposed.

Original languageEnglish (US)
Title of host publicationSurface Chemical Cleaning and Passivation for Semiconductor Processing
EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
PublisherPubl by Materials Research Society
Pages35-45
Number of pages11
ISBN (Print)1558992138
StatePublished - Dec 1 1993
Externally publishedYes
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 13 1993Apr 15 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume315
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period4/13/934/15/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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