Nitrogen incorporation in gate dielectrics: a correlation between Auger electron spectroscopy and surface charge analysis techniques

Ara Philipossian, B. Doyle, K. Van Wormer

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Thermal oxides are grown under various processing conditions which introduce nitrogen into the gate dielectric. It is shown that the positive charge introduced during these processes, measured by surface charge analysis (SCA), correlates with the amount of nitrogen incorporated in the oxides, measured by Auger electron spectroscopy (AES). It is suggested that the SCA technique offers a simple and cost-effective method of characterizing oxides for their nitrogen content.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume142
Issue number10
StatePublished - Oct 1995
Externally publishedYes

Fingerprint

Gate dielectrics
Auger electron spectroscopy
Surface charge
Oxides
Auger spectroscopy
electron spectroscopy
Nitrogen
Nitrogen Oxides
nitrogen
oxides
Processing
costs
Costs
Hot Temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

@article{57b7ef1a702447d680c018adc9abc67b,
title = "Nitrogen incorporation in gate dielectrics: a correlation between Auger electron spectroscopy and surface charge analysis techniques",
abstract = "Thermal oxides are grown under various processing conditions which introduce nitrogen into the gate dielectric. It is shown that the positive charge introduced during these processes, measured by surface charge analysis (SCA), correlates with the amount of nitrogen incorporated in the oxides, measured by Auger electron spectroscopy (AES). It is suggested that the SCA technique offers a simple and cost-effective method of characterizing oxides for their nitrogen content.",
author = "Ara Philipossian and B. Doyle and {Van Wormer}, K.",
year = "1995",
month = "10",
language = "English (US)",
volume = "142",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "10",

}

TY - JOUR

T1 - Nitrogen incorporation in gate dielectrics

T2 - a correlation between Auger electron spectroscopy and surface charge analysis techniques

AU - Philipossian, Ara

AU - Doyle, B.

AU - Van Wormer, K.

PY - 1995/10

Y1 - 1995/10

N2 - Thermal oxides are grown under various processing conditions which introduce nitrogen into the gate dielectric. It is shown that the positive charge introduced during these processes, measured by surface charge analysis (SCA), correlates with the amount of nitrogen incorporated in the oxides, measured by Auger electron spectroscopy (AES). It is suggested that the SCA technique offers a simple and cost-effective method of characterizing oxides for their nitrogen content.

AB - Thermal oxides are grown under various processing conditions which introduce nitrogen into the gate dielectric. It is shown that the positive charge introduced during these processes, measured by surface charge analysis (SCA), correlates with the amount of nitrogen incorporated in the oxides, measured by Auger electron spectroscopy (AES). It is suggested that the SCA technique offers a simple and cost-effective method of characterizing oxides for their nitrogen content.

UR - http://www.scopus.com/inward/record.url?scp=0029393379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029393379&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029393379

VL - 142

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 10

ER -