Nitrogen Incorporation in Gate Dielectrics: A Correlation Between Auger Electron Spectroscopy and Surface Charge Analysis Techniques

A. Philipossian, B. Doyle

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Thermal oxides are grown under various processing conditions which introduce nitrogen into the gate dielectric. It is shown that the positive charge introduced during these processes, measured by surface charge analysis (SCA), correlates with the amount of nitrogen incorporated in the oxides, measured by Auger electron spectroscopy (AES). It is suggested that the SCA technique offers a simple and cost-effective method of characterizing oxides for their nitrogen content.

Original languageEnglish (US)
Pages (from-to)171-172
Number of pages2
JournalJournal of the Electrochemical Society
Volume142
Issue number10
DOIs
StatePublished - Oct 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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