Non-Gaussian effects in 1/f noise in small silicon-on-sapphire resistors

P. J. Restle, Russell J Hamilton, M. B. Weissman, M. S. Love

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

Several models for 1/f noise in silicon which give identical predictions for noise spectra were found to give distinct predictions for non-Gaussian effects as shown by Monte Carlo simulations. Measurements on silicon-on-sapphire resistors ranging in area to less than 1 (m)2 revealed both non-Gaussian effects and sample-to-sample spectral variations. The results were qualitatively similar to those expected for a simple superposition of two-level trapping systems and dissimilar to those for a random walk in a random potential. However, some random modulation of some of the two-level systems was found.

Original languageEnglish (US)
Pages (from-to)2254-2262
Number of pages9
JournalPhysical Review B
Volume31
Issue number4
DOIs
StatePublished - 1985
Externally publishedYes

Fingerprint

Aluminum Oxide
Silicon
Sapphire
resistors
Resistors
sapphire
noise spectra
silicon
predictions
random walk
trapping
Modulation
modulation
simulation
Monte Carlo simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Non-Gaussian effects in 1/f noise in small silicon-on-sapphire resistors. / Restle, P. J.; Hamilton, Russell J; Weissman, M. B.; Love, M. S.

In: Physical Review B, Vol. 31, No. 4, 1985, p. 2254-2262.

Research output: Contribution to journalArticle

Restle, P. J. ; Hamilton, Russell J ; Weissman, M. B. ; Love, M. S. / Non-Gaussian effects in 1/f noise in small silicon-on-sapphire resistors. In: Physical Review B. 1985 ; Vol. 31, No. 4. pp. 2254-2262.
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