Abstract
This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 402-409 |
| Number of pages | 8 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 38 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2002 |
| Externally published | Yes |
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Keywords
- Nonequilibrium laser dynamics
- Optical hole burning
- Quantum-well lasers
- Semiconductor lasers
- Surface-emitting lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Nonequilibrium model for semiconductor laser modulation response. / Chow, Weng W.; Schneider, Hans Christian; Koch, Stephan W; Chang, Chih Hao; Chrostowski, Lukas; Chang-Hasnain, Connie J.
In: IEEE Journal of Quantum Electronics, Vol. 38, No. 4, 04.2002, p. 402-409.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nonequilibrium model for semiconductor laser modulation response
AU - Chow, Weng W.
AU - Schneider, Hans Christian
AU - Koch, Stephan W
AU - Chang, Chih Hao
AU - Chrostowski, Lukas
AU - Chang-Hasnain, Connie J.
PY - 2002/4
Y1 - 2002/4
N2 - This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.
AB - This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.
KW - Nonequilibrium laser dynamics
KW - Optical hole burning
KW - Quantum-well lasers
KW - Semiconductor lasers
KW - Surface-emitting lasers
UR - http://www.scopus.com/inward/record.url?scp=0036540040&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036540040&partnerID=8YFLogxK
U2 - 10.1109/3.992554
DO - 10.1109/3.992554
M3 - Article
AN - SCOPUS:0036540040
VL - 38
SP - 402
EP - 409
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 4
ER -