Nonequilibrium model for semiconductor laser modulation response

Weng W. Chow, Hans Christian Schneider, Stephan W. Koch, Chih Hao Chang, Lukas Chrostowski, Connie J. Chang-Hasnain

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.

Original languageEnglish (US)
Pages (from-to)402-409
Number of pages8
JournalIEEE Journal of Quantum Electronics
Volume38
Issue number4
DOIs
StatePublished - Apr 1 2002

Keywords

  • Nonequilibrium laser dynamics
  • Optical hole burning
  • Quantum-well lasers
  • Semiconductor lasers
  • Surface-emitting lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Chow, W. W., Schneider, H. C., Koch, S. W., Chang, C. H., Chrostowski, L., & Chang-Hasnain, C. J. (2002). Nonequilibrium model for semiconductor laser modulation response. IEEE Journal of Quantum Electronics, 38(4), 402-409. https://doi.org/10.1109/3.992554