Abstract
This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.
Original language | English (US) |
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Pages (from-to) | 402-409 |
Number of pages | 8 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 38 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2002 |
Keywords
- Nonequilibrium laser dynamics
- Optical hole burning
- Quantum-well lasers
- Semiconductor lasers
- Surface-emitting lasers
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering