Nonequilibrium model for semiconductor laser modulation response

Weng W. Chow; Hans Christian Schneider; Stephan W. Koch; Chih Hao Chang; Lukas Chrostowski; Connie J. Chang-Hasnain

doi:10.1109/3.992554

Nonequilibrium model for semiconductor laser modulation response

Weng W. Chow, Hans Christian Schneider, Stephan W. Koch, Chih Hao Chang, Lukas Chrostowski, Connie J. Chang-Hasnain

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.

Original language	English (US)
Pages (from-to)	402-409
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	38
Issue number	4
DOIs	https://doi.org/10.1109/3.992554
State	Published - Apr 2002

Keywords

Nonequilibrium laser dynamics
Optical hole burning
Quantum-well lasers
Semiconductor lasers
Surface-emitting lasers

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Nonequilibrium model for semiconductor laser modulation response",

abstract = "This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.",

keywords = "Nonequilibrium laser dynamics, Optical hole burning, Quantum-well lasers, Semiconductor lasers, Surface-emitting lasers",

author = "Chow, {Weng W.} and Schneider, {Hans Christian} and Koch, {Stephan W.} and Chang, {Chih Hao} and Lukas Chrostowski and Chang-Hasnain, {Connie J.}",

note = "Funding Information: Manuscript received October 2, 2001. This work was supported by the U.S. Department of Energy under Contract DE-AC04-94AL8500, the Advanced Research and Development Activity (ARDA) under Contract MOD 706697, the Leibniz Program of the DFG, and the Max-Planck Research Program of the Max-Planck Society and the Humboldt Foundation.",

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AU - Koch, Stephan W.

AU - Chang, Chih Hao

AU - Chrostowski, Lukas

AU - Chang-Hasnain, Connie J.

N1 - Funding Information: Manuscript received October 2, 2001. This work was supported by the U.S. Department of Energy under Contract DE-AC04-94AL8500, the Advanced Research and Development Activity (ARDA) under Contract MOD 706697, the Leibniz Program of the DFG, and the Max-Planck Research Program of the Max-Planck Society and the Humboldt Foundation.

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N2 - This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.

AB - This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.

KW - Nonequilibrium laser dynamics

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KW - Quantum-well lasers

KW - Semiconductor lasers

KW - Surface-emitting lasers

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Nonequilibrium model for semiconductor laser modulation response

Abstract

Keywords

ASJC Scopus subject areas

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