Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors

K. Bohnert, M. Anselment, G. Kobbe, C. Klingshirn, H. Haug, S. W. Koch, S. Schmitt-Rink, F. F. Abraham

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62 Scopus citations

Abstract

The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition.

Original languageEnglish (US)
Pages (from-to)1-11
Number of pages11
JournalZeitschrift für Physik B Condensed Matter
Volume42
Issue number1
DOIs
StatePublished - Mar 1981

ASJC Scopus subject areas

  • Condensed Matter Physics

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