Nonequilibrium theory for semiconductor laser systems

A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, S. W. Koch, J. Hader, J. V. Moloney, W. W. Chow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A dynamical laser model is coupled to a fully microscopic calculation of scattering rates, allowing efficient calculations without phenomenological parameters. The approach is used to analyze nonequilibrium effects in the switch-on of an optically pumped laser structure. Lasing leads to kinetic hole burning in both electron and hole distribution. The gain spectrum, however, does not show spectrally narrow hole burning but a reduction over a wide range of frequencies compared to the equilibrium gain because of the large homogeneous broadening in the high density lasing system.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XIV
DOIs
StatePublished - May 22 2006
EventPhysics and Simulation of Optoelectronic Devices XIV - San Jose, CA, United States
Duration: Jan 22 2006Jan 26 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6115
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XIV
Country/TerritoryUnited States
CitySan Jose, CA
Period1/22/061/26/06

Keywords

  • Hole burning
  • Microscopic gain calculations
  • Nonequilibrium effects
  • Quantum well lasers
  • Transient gain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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