Nonlinear excitations of semiconductor quantum wells with intense terahertz fields

J. T. Steiner, M. Kira, S. W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XVI
DOIs
StatePublished - Mar 31 2008
EventPhysics and Simulation of Optoelectronic Devices XVI - San Jose, CA, United States
Duration: Jan 21 2008Jan 24 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6889
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XVI
CountryUnited States
CitySan Jose, CA
Period1/21/081/24/08

Keywords

  • Nonlinear optics
  • Optical properties
  • Semiconductors
  • Terahertz excitation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Steiner, J. T., Kira, M., & Koch, S. W. (2008). Nonlinear excitations of semiconductor quantum wells with intense terahertz fields. In Physics and Simulation of Optoelectronic Devices XVI [68890D] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6889). https://doi.org/10.1117/12.784330