Nonlinear excitations of semiconductor quantum wells with intense terahertz fields

J. T. Steiner, M. Kira, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6889
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XVI - San Jose, CA, United States
Duration: Jan 21 2008Jan 24 2008

Other

OtherPhysics and Simulation of Optoelectronic Devices XVI
CountryUnited States
CitySan Jose, CA
Period1/21/081/24/08

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Keywords

  • Nonlinear optics
  • Optical properties
  • Semiconductors
  • Terahertz excitation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Steiner, J. T., Kira, M., & Koch, S. W. (2008). Nonlinear excitations of semiconductor quantum wells with intense terahertz fields. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6889). [68890D] https://doi.org/10.1117/12.784330