Nonlinear excitations of semiconductor quantum wells with intense terahertz fields

J. T. Steiner; M. Kira; Stephan W Koch

doi:10.1117/12.784330

Nonlinear excitations of semiconductor quantum wells with intense terahertz fields

J. T. Steiner, M. Kira, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6889
DOIs	https://doi.org/10.1117/12.784330
Publication status	Published - 2008
Externally published	Yes
Event	Physics and Simulation of Optoelectronic Devices XVI - San Jose, CA, United States Duration: Jan 21 2008 → Jan 24 2008

Other

Other	Physics and Simulation of Optoelectronic Devices XVI
Country	United States
City	San Jose, CA
Period	1/21/08 → 1/24/08

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Keywords

Nonlinear optics
Optical properties
Semiconductors
Terahertz excitation

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Steiner, J. T., Kira, M., & Koch, S. W. (2008). Nonlinear excitations of semiconductor quantum wells with intense terahertz fields. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6889). [68890D] https://doi.org/10.1117/12.784330

@inproceedings{63d0df01ded3413bb3fb7644cc6ae144,

title = "Nonlinear excitations of semiconductor quantum wells with intense terahertz fields",

abstract = "The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.",

keywords = "Nonlinear optics, Optical properties, Semiconductors, Terahertz excitation",

author = "Steiner, {J. T.} and M. Kira and Koch, {Stephan W}",

year = "2008",

doi = "10.1117/12.784330",

language = "English (US)",

isbn = "9780819470645",

volume = "6889",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Physics and Simulation of Optoelectronic Devices XVI ; Conference date: 21-01-2008 Through 24-01-2008",

}

TY - GEN

T1 - Nonlinear excitations of semiconductor quantum wells with intense terahertz fields

AU - Steiner, J. T.

AU - Kira, M.

AU - Koch, Stephan W

PY - 2008

Y1 - 2008

N2 - The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.

AB - The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.

KW - Nonlinear optics

KW - Optical properties

KW - Semiconductors

KW - Terahertz excitation

UR - http://www.scopus.com/inward/record.url?scp=41149101030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41149101030&partnerID=8YFLogxK

U2 - 10.1117/12.784330

DO - 10.1117/12.784330

M3 - Conference contribution

AN - SCOPUS:41149101030

SN - 9780819470645

VL - 6889

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics and Simulation of Optoelectronic Devices XVI

Y2 - 21 January 2008 through 24 January 2008

ER -

Access to Document

10.1117/12.784330