Abstract
The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 6889 |
| DOIs | |
| State | Published - 2008 |
| Externally published | Yes |
| Event | Physics and Simulation of Optoelectronic Devices XVI - San Jose, CA, United States Duration: Jan 21 2008 → Jan 24 2008 |
Other
| Other | Physics and Simulation of Optoelectronic Devices XVI |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 1/21/08 → 1/24/08 |
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Keywords
- Nonlinear optics
- Optical properties
- Semiconductors
- Terahertz excitation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Nonlinear excitations of semiconductor quantum wells with intense terahertz fields. / Steiner, J. T.; Kira, M.; Koch, Stephan W.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6889 2008. 68890D.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Nonlinear excitations of semiconductor quantum wells with intense terahertz fields
AU - Steiner, J. T.
AU - Kira, M.
AU - Koch, Stephan W
PY - 2008
Y1 - 2008
N2 - The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.
AB - The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.
KW - Nonlinear optics
KW - Optical properties
KW - Semiconductors
KW - Terahertz excitation
UR - http://www.scopus.com/inward/record.url?scp=41149101030&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=41149101030&partnerID=8YFLogxK
U2 - 10.1117/12.784330
DO - 10.1117/12.784330
M3 - Conference contribution
AN - SCOPUS:41149101030
SN - 9780819470645
VL - 6889
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -