Nonlinear GaAlInAs/AlInAs multiple-quantum-well materials and devices at 1.3 microns for ultrafast TDMA interconnects

Mark F. Krol, Steven T. Johns, Raymond K. Boncek, T. Ohtsuki, Brian P. McGinnis, C. Hsu, Galina Khitrova, Hyatt M. Gibbs, Nasser N Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Multiple Quantum Well (MQW) materials and devices have been designed and demonstrated to have large optical nonlinearities which are suitable for use in ultrafast optical TDMA interconnects at 1.3 μm. The MQW materials consist of GaAlInAs wells and AlInAs barriers grown lattice-matched to a semi-insulating InP substrate by molecular beam epitaxy. The MQW samples exhibited large absorption changes at 1.3 μm due to bandfilling and exchange effects. The carrier saturation densities near the heavy-hole exciton peak were similar to those for GaAs/AlGaAs MQWs. The large optical nonlinearities near 1.3 μm were used to demonstrate an all-optical, high-contrast asymmetric reflection modulator suitable for performing all-optical time-division demultiplexing at low pump intensities. The modulator consists of an asymmetric Fabry-Perot etalon which utilizes a nonlinear MQW spacer. The modulator exhibited an on/off contrast ratio of greater than 1000:1 and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2. The recovery of the modulator is shown to decay with a time-constant of 725 ps.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages24-30
Number of pages7
Volume1790
ISBN (Print)0819409693
StatePublished - 1993
Externally publishedYes
EventAnalog Photonics - Boston, MA, USA
Duration: Sep 10 1992Sep 11 1992

Other

OtherAnalog Photonics
CityBoston, MA, USA
Period9/10/929/11/92

Fingerprint

time division multiple access
Time division multiple access
Semiconductor quantum wells
Modulators
modulators
quantum wells
nonlinearity
Pumps
pumps
Demultiplexing
demultiplexing
Insertion losses
insertion loss
Molecular beam epitaxy
Excitons
spacers
time constant
division
aluminum gallium arsenides
molecular beam epitaxy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Krol, M. F., Johns, S. T., Boncek, R. K., Ohtsuki, T., McGinnis, B. P., Hsu, C., ... Peyghambarian, N. N. (1993). Nonlinear GaAlInAs/AlInAs multiple-quantum-well materials and devices at 1.3 microns for ultrafast TDMA interconnects. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1790, pp. 24-30). Publ by Int Soc for Optical Engineering.

Nonlinear GaAlInAs/AlInAs multiple-quantum-well materials and devices at 1.3 microns for ultrafast TDMA interconnects. / Krol, Mark F.; Johns, Steven T.; Boncek, Raymond K.; Ohtsuki, T.; McGinnis, Brian P.; Hsu, C.; Khitrova, Galina; Gibbs, Hyatt M.; Peyghambarian, Nasser N.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1790 Publ by Int Soc for Optical Engineering, 1993. p. 24-30.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Krol, MF, Johns, ST, Boncek, RK, Ohtsuki, T, McGinnis, BP, Hsu, C, Khitrova, G, Gibbs, HM & Peyghambarian, NN 1993, Nonlinear GaAlInAs/AlInAs multiple-quantum-well materials and devices at 1.3 microns for ultrafast TDMA interconnects. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 1790, Publ by Int Soc for Optical Engineering, pp. 24-30, Analog Photonics, Boston, MA, USA, 9/10/92.
Krol MF, Johns ST, Boncek RK, Ohtsuki T, McGinnis BP, Hsu C et al. Nonlinear GaAlInAs/AlInAs multiple-quantum-well materials and devices at 1.3 microns for ultrafast TDMA interconnects. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1790. Publ by Int Soc for Optical Engineering. 1993. p. 24-30
Krol, Mark F. ; Johns, Steven T. ; Boncek, Raymond K. ; Ohtsuki, T. ; McGinnis, Brian P. ; Hsu, C. ; Khitrova, Galina ; Gibbs, Hyatt M. ; Peyghambarian, Nasser N. / Nonlinear GaAlInAs/AlInAs multiple-quantum-well materials and devices at 1.3 microns for ultrafast TDMA interconnects. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1790 Publ by Int Soc for Optical Engineering, 1993. pp. 24-30
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abstract = "Multiple Quantum Well (MQW) materials and devices have been designed and demonstrated to have large optical nonlinearities which are suitable for use in ultrafast optical TDMA interconnects at 1.3 μm. The MQW materials consist of GaAlInAs wells and AlInAs barriers grown lattice-matched to a semi-insulating InP substrate by molecular beam epitaxy. The MQW samples exhibited large absorption changes at 1.3 μm due to bandfilling and exchange effects. The carrier saturation densities near the heavy-hole exciton peak were similar to those for GaAs/AlGaAs MQWs. The large optical nonlinearities near 1.3 μm were used to demonstrate an all-optical, high-contrast asymmetric reflection modulator suitable for performing all-optical time-division demultiplexing at low pump intensities. The modulator consists of an asymmetric Fabry-Perot etalon which utilizes a nonlinear MQW spacer. The modulator exhibited an on/off contrast ratio of greater than 1000:1 and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2. The recovery of the modulator is shown to decay with a time-constant of 725 ps.",
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AU - Johns, Steven T.

AU - Boncek, Raymond K.

AU - Ohtsuki, T.

AU - McGinnis, Brian P.

AU - Hsu, C.

AU - Khitrova, Galina

AU - Gibbs, Hyatt M.

AU - Peyghambarian, Nasser N

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N2 - Multiple Quantum Well (MQW) materials and devices have been designed and demonstrated to have large optical nonlinearities which are suitable for use in ultrafast optical TDMA interconnects at 1.3 μm. The MQW materials consist of GaAlInAs wells and AlInAs barriers grown lattice-matched to a semi-insulating InP substrate by molecular beam epitaxy. The MQW samples exhibited large absorption changes at 1.3 μm due to bandfilling and exchange effects. The carrier saturation densities near the heavy-hole exciton peak were similar to those for GaAs/AlGaAs MQWs. The large optical nonlinearities near 1.3 μm were used to demonstrate an all-optical, high-contrast asymmetric reflection modulator suitable for performing all-optical time-division demultiplexing at low pump intensities. The modulator consists of an asymmetric Fabry-Perot etalon which utilizes a nonlinear MQW spacer. The modulator exhibited an on/off contrast ratio of greater than 1000:1 and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2. The recovery of the modulator is shown to decay with a time-constant of 725 ps.

AB - Multiple Quantum Well (MQW) materials and devices have been designed and demonstrated to have large optical nonlinearities which are suitable for use in ultrafast optical TDMA interconnects at 1.3 μm. The MQW materials consist of GaAlInAs wells and AlInAs barriers grown lattice-matched to a semi-insulating InP substrate by molecular beam epitaxy. The MQW samples exhibited large absorption changes at 1.3 μm due to bandfilling and exchange effects. The carrier saturation densities near the heavy-hole exciton peak were similar to those for GaAs/AlGaAs MQWs. The large optical nonlinearities near 1.3 μm were used to demonstrate an all-optical, high-contrast asymmetric reflection modulator suitable for performing all-optical time-division demultiplexing at low pump intensities. The modulator consists of an asymmetric Fabry-Perot etalon which utilizes a nonlinear MQW spacer. The modulator exhibited an on/off contrast ratio of greater than 1000:1 and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2. The recovery of the modulator is shown to decay with a time-constant of 725 ps.

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