Nonlinear Optical Properties and Ultrafast Response of Gaas-Alas Type-Ii Quantum Wells

Winston S. Fu; James S. Harris; Rolf Binder; Stephen W. Koch; John F. Klem; Greg R. Olbright

doi:10.1109/3.159547

Nonlinear Optical Properties and Ultrafast Response of Gaas-Alas Type-Ii Quantum Wells

Winston S. Fu, James S. Harris, Rolf Binder, Stephen W. Koch, John F. Klem, Greg R. Olbright

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal electric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. the theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.

Original language	English (US)
Pages (from-to)	2404-2415
Number of pages	12
Journal	IEEE Journal of Quantum Electronics
Volume	28
Issue number	10
DOIs	https://doi.org/10.1109/3.159547
State	Published - Jan 1 1992

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{8e5d676d0b9b4c9d95cbf7951eac4d86,

title = "Nonlinear Optical Properties and Ultrafast Response of Gaas-Alas Type-Ii Quantum Wells",

abstract = "Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal electric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. the theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.",

author = "Fu, {Winston S.} and Harris, {James S.} and Rolf Binder and Koch, {Stephen W.} and Klem, {John F.} and Olbright, {Greg R.}",

year = "1992",

month = jan,

day = "1",

doi = "10.1109/3.159547",

language = "English (US)",

volume = "28",

pages = "2404--2415",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Nonlinear Optical Properties and Ultrafast Response of Gaas-Alas Type-Ii Quantum Wells

AU - Fu, Winston S.

AU - Harris, James S.

AU - Binder, Rolf

AU - Koch, Stephen W.

AU - Klem, John F.

AU - Olbright, Greg R.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal electric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. the theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.

AB - Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal electric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. the theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.

UR - http://www.scopus.com/inward/record.url?scp=0026941939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026941939&partnerID=8YFLogxK

U2 - 10.1109/3.159547

DO - 10.1109/3.159547

M3 - Article

AN - SCOPUS:0026941939

VL - 28

SP - 2404

EP - 2415

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 10

ER -