Nonlinear pulse propagation in semiconductors: hole burning within a homogeneous line

J. Förstner; A. Knorr; S. W. Koch

doi:10.1103/PhysRevLett.86.476

Nonlinear pulse propagation in semiconductors: hole burning within a homogeneous line

J. Förstner, A. Knorr, S. W. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The weakly excitation regime in semiconductors was addressed. By theoretically analyzing optical pulse propagation through a bulk semiconductor, the occurrence of narrow spectral signatures within the homogeneous line was predicted.

Original language	English (US)
Pages (from-to)	476-479
Number of pages	4
Journal	Physical review letters
Volume	86
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevLett.86.476
State	Published - Jan 15 2001

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1103/PhysRevLett.86.476

Cite this

@article{ee91933dd40a420fa01a577f0fb38f48,

title = "Nonlinear pulse propagation in semiconductors: hole burning within a homogeneous line",

abstract = "The weakly excitation regime in semiconductors was addressed. By theoretically analyzing optical pulse propagation through a bulk semiconductor, the occurrence of narrow spectral signatures within the homogeneous line was predicted.",

author = "J. F{\"o}rstner and A. Knorr and Koch, {S. W.}",

year = "2001",

month = jan,

day = "15",

doi = "10.1103/PhysRevLett.86.476",

language = "English (US)",

volume = "86",

pages = "476--479",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "3",

}

TY - JOUR

T1 - Nonlinear pulse propagation in semiconductors

T2 - hole burning within a homogeneous line

AU - Förstner, J.

AU - Knorr, A.

AU - Koch, S. W.

PY - 2001/1/15

Y1 - 2001/1/15

N2 - The weakly excitation regime in semiconductors was addressed. By theoretically analyzing optical pulse propagation through a bulk semiconductor, the occurrence of narrow spectral signatures within the homogeneous line was predicted.

AB - The weakly excitation regime in semiconductors was addressed. By theoretically analyzing optical pulse propagation through a bulk semiconductor, the occurrence of narrow spectral signatures within the homogeneous line was predicted.

UR - http://www.scopus.com/inward/record.url?scp=0343026507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343026507&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.86.476

DO - 10.1103/PhysRevLett.86.476

M3 - Article

C2 - 11177859

AN - SCOPUS:0343026507

VL - 86

SP - 476

EP - 479

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 3

ER -

Nonlinear pulse propagation in semiconductors: hole burning within a homogeneous line

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this