Nonlinearities in the absorption and photoluminescence spectra of GaAs/AlAs type II heterostructures

G. R. Olbright, W. S. Fu, J. Klem, A. Owyoung, G. R. Hadley, R. Binder, Stephen W. Koch, I. Galbraith

Research output: Contribution to conferencePaper

Abstract

The first observation of quasi-steady-state optical nonlinearities in the absorption and photoluminescence (PL) spectra of GaAs/AlAs type-II heterostructures is reported. Deep modulation, ΔT approximately 0.5(Δα = -50,000/cm), due to a >40-meV blue shift and bleaching of the heavy-hole exciton absorption peaks is observed using pump-probe spectroscopy. In addition, a blue shift of up to approximately 10 meV of the indirect PL line is observed with increasing PL excitation intensity. These nonlinearities are understood in terms of spatially separated layers of electrons and holes that are produced by the optical excitation process.

Original languageEnglish (US)
Pages124-125
Number of pages2
StatePublished - Dec 1 1990
Event17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA
Duration: May 21 1990May 25 1990

Other

Other17th International Conference on Quantum Electronics - IQEC '90
CityAnaheim, CA, USA
Period5/21/905/25/90

ASJC Scopus subject areas

  • Engineering(all)

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    Olbright, G. R., Fu, W. S., Klem, J., Owyoung, A., Hadley, G. R., Binder, R., Koch, S. W., & Galbraith, I. (1990). Nonlinearities in the absorption and photoluminescence spectra of GaAs/AlAs type II heterostructures. 124-125. Paper presented at 17th International Conference on Quantum Electronics - IQEC '90, Anaheim, CA, USA, .