A technique to dice wafer was analyzed by using photolithography and reactive ion etching. The photoresists were used as a mask to protect the underlying device during the etching. It was observed that typical wafer cutting required a spacing of the order of about 100 μm. It was also observed that this technique could be used to cut very small die with almost any conceivable shape subject to the limitations of dry etching.
|Original language||English (US)|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 1 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering