Normal mode coupling in a 3D semiconductor nanocavity

E. S. Lee, S. Park, O. Ell, P. Brick, H. M. Gibbs, G. Khitrova, D. G. Deppe, D. L. Huffaker

Research output: Contribution to conferencePaperpeer-review

Abstract

Recent progress in microfabrication involving etching processes makes it possible to engineer 3-D nanostructures from MBE-grown planar Fabry-Perot microcavities. Here the optical mode is confined laterally by implementing a thin dielectric (native oxide) aperture layer on top of the cavity spacer. The sample under investigation consists of a 16 period GaAs/A1As bottom mirror, a λ GaAs spacer, and a 4-period ZnSe/MgF2 dielectric mirror on top of the oxide aperture. The aperture diameters range from 1 to 7 μm. A high-quality 85 angstrom InGaAs single quantum well is located in the anti-node of the spacer.

Original languageEnglish (US)
Pages58-59
Number of pages2
StatePublished - Dec 1 2000
EventQuantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA
Duration: May 7 2000May 12 2000

Other

OtherQuantum Electronics and Laser Science Conference (QELS 2000)
CitySan Francisco, CA, USA
Period5/7/005/12/00

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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